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Ultrasonic-assisted method for preparing CdS film

An ultrasonic-assisted, thin-film technology, applied in coatings, electrical components, circuits, etc., can solve problems such as poor repeatability, low efficiency, and limited improvement in CdS film quality, reducing deposition, promoting interactions, and avoiding The effect of the formation of abnormally large particles

Inactive Publication Date: 2015-02-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the method of generating vibration by beating is inefficient and has poor repeatability, and the improvement in the quality of CdS film formation is limited.

Method used

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  • Ultrasonic-assisted method for preparing CdS film

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Embodiment Construction

[0025] The specific embodiments of the present invention will be described in further detail below through the accompanying drawings and examples:

[0026] See figure 1 , the water bath device with heating temperature control and magnetic stirring functions includes: a temperature-controllable heating table 1, a water bath beaker 2 placed on the heating table, and a small beaker placed in the water bath beaker 2 for placing the cylindrical support 8 3. There is a stirring magnet 4 at the bottom of the small beaker 3, and an L-shaped bracket 5 on the side of the heating table 1 for fixing the ultrasonic vibrating rod 6 and the temperature sensor 7. The heating table controls the temperature in the water bath through the temperature sensor.

[0027] The cylindrical support 8 is a hollow regular hexagonal prism made of PP plastic, the substrates on which the CdS film is to be deposited are respectively fixed on the six prism surfaces, and the ultrasonic vibrating rod 6 is fixedly...

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Abstract

The invention discloses an ultrasonic-assisted method for preparing a CdS film. According to the method, ultrasonic vibrations are directly applied to the substrate in the film growth process to reduce the holes formed in the CdS film and the particles deposited on the surface in the existing preparation method. The CdS film is uniform and compact, and few CdS particles are adsorbed to the surface, thereby enhancing the efficiency of the film solar cell. The method can simultaneously perform CdS film deposition on multiple substrates, thereby enhancing the work efficiency.

Description

technical field [0001] The invention relates to a process for preparing a CdS thin film in the thin film solar cell manufacturing technology, in particular to a method for preparing a CdS thin film using ultrasonic assistance. Background technique [0002] CdS is a direct bandgap n-type semiconductor material with a band gap width of 2.42 eV. in CuIn 1-x Ga x Se 2 In (CIGS) thin-film solar cells, CdS is used as a buffer layer between the low-bandgap CIGS absorber layer and the high-bandgap ZnO window layer, reducing the bandgap step and lattice mismatch between the two. Meanwhile, the n-type CdS layer and the ZnO layer and the p-type CIGS layer form a p-n junction, thus constituting the core structure of the solar cell. The film formation quality of the CdS layer has an important influence on the performance of solar cells. [0003] Chemical bath deposition (CBD) is the most widely used method for the preparation of CdS thin films. It has the advantages of simple proces...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C26/00H01L31/0296
CPCC23C18/1204C23C18/1287H01L31/0296
Inventor 褚君浩孙雷马建华姚娘娟江锦春
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI