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Hydrophobic bank

A technology of cofferdams and areas, applied in the direction of electrical components, electrical solid devices, semiconductor/solid device manufacturing, etc., can solve problems such as high leakage equipment, poor color uniformity and/or light emission efficiency

Active Publication Date: 2015-02-25
CAMBRIDGE DISPLAY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The highly conductive HIL coupled with the short path length between the anode (ITO) surface and the HIL-IL-EL-cathode consistent pinning point, has been shown to lead to high leakage devices
[0007] Similarly, light emitting devices with bank structures may have poor color uniformity and / or light emission efficiency across the active area

Method used

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Examples

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Embodiment 1

[0072] Embodiments generally provide single-dam architectures, eg, with longer path lengths, thereby reducing leakage currents. For OLEDs, this path length can be between the anode surface (eg, ITO) and the HIL-IL-EL consistent fluidic pinning point. These longer path lengths along the highly resistive HIL can create highly resistive paths for any potential parasitic leakage currents and / or non-emitting edge device diodes. This cofferdam structure is shown to be an improvement in OLED lifetime stability.

[0073] Various bank fabrication processes for this embodiment are investigated in the following description. For example: (i) a hydrophobic dam developed by secondary layer patterning and partial reactive ion etching (RIE); (ii) an unpatterned hydrophobic dam with a partially exposed pixel edge for the RIE masking layer ; (iii) a double development process; (iv) a double mask process with a single patterned layer; (v) a single mask partial transmission (leakage) process wi...

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Abstract

The invention relates to a hydrophobic bank. The invention provides a method for constructing an electronic device with an electric insulation bank structure. The electric insulation bank structure is provided with a side wall defining a well. The method comprises steps of forming a bank structure so as to allow the side wall to have a first slope extending from a surface layer area and a steeper second slope extending from the first slope and to allow the side wall to have a surface energy interrupt at a point where the first slope is separated from the second slope; forming a layer structure comprising at least one layer of organic semiconductive materials in solution of the material deposited in the well, wherein the deposited solution wets the first slope and the second slope till the pinning points at the surface energy interrupt; and drying the deposited solution.

Description

technical field [0001] The present invention generally relates to a method of constructing an electronic device comprising a substrate having a surface layer and bank structures defining wells thereon, and the electronic device comprising a surface layer and a bank structure on the surface layer The base plate of the cofferdam structure that defines the well. Background technique [0002] Methods involving the deposition of active ingredients from solution (solution processing) for the manufacture of electronic devices have been extensively investigated. If the active ingredient is deposited from solution, the active ingredient is preferably contained within the desired area of ​​the substrate. This can be achieved by providing a substrate comprising a patterned barrier layer defining wells into which the active ingredient can be deposited from solution. The wells contain the solution while being dried such that the active ingredient remains in the area of ​​the substrate ...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56H01L27/32
CPCH10K50/18H10K50/80H10K71/00H01L21/02282H01L21/0212
Inventor J·爱萨克G·威廉姆斯D·福赛西L·伯姆伯尔
Owner CAMBRIDGE DISPLAY TECH LTD
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