Nonvolatile memory with low power consumption and low erasing voltage based on standard technology

Abstract

The invention discloses a nonvolatile memory with low power consumption and low erasing voltage based on a standard technology. The programming and erasing operations of the nonvolatile memory are completed by utilizing an FN (Fowler-Nordheim) tunneling effect, the problem of high power consumption is solved, and the area is reduced. The nonvolatile memory comprises a plurality of memory units, wherein each memory unit consists of a module A and a module B; each module A comprises four transistors, namely a first voltage increasing tube AM1, a second voltage increasing tube AM2, a first charging tube AM3 and a second charging tube AM4; each module B comprises a control tube BM1, a tunneling tube BM2, a first reading tube BM3, a second reading tube BM4, a first selecting tube BM5 and a second selecting tube BM6; all the transistors adopt single polysilicon gate structures and gate oxide layers with the same thickness; the memory units are compatible with a standard CMOS technology. According to the invention, the application cost is reduced, the technical development period is reduced, the reading speed is higher, and the reliability is high.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, relates to a storage technology of a semiconductor integrated circuit, in particular to a nonvolatile memory with low power consumption and low erasing voltage based on a standard process. Background technique [0002] Many integrated electronic devices require some amount of non-volatile memory. Usually non-volatile memory is used as an independent memory outside the chip or as a memory in the tag chip, mainly to store some control programs, processing instructions or items related to the chip for a long time without power supply. information and more. [0003] Several types of non-volatile memory commonly used at present mainly include erasable programmable read-only memory EPROM, electrically erasable programmable read-only memory EEPROM and flash memory Flash Memory. In addition, there are ferroelectric memory FeRAM, magnetic random access memory MRAM and phase change memory OUM an...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a non-volatile memory with low power consumption and low erasing voltage based on a standard process to solve the above-mentioned deficiencies in the prior art. Its programming and erasing operations are all completed using the FN tunneling effect. Solve the problem of high power consumption; use the pseudo-differential memory cell structure, output differential signals, high reliability, and help to use the differential structure of the sensitive amplifier to improve the read speed; the programming and erasing process requires only a low Voltage (about half of the normal high voltage) can be realized, so the high voltage generation circuit can be simplified

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