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Method for producing a substrate with stacked deposition layers

A technology for depositing layers and substrates, applied in the field of photovoltaic cells

Inactive Publication Date: 2015-03-04
SOLAYTEC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Challenges exist in producing multilayer stack deposition layers for photovoltaic cells with variable stack composition and thickness

Method used

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  • Method for producing a substrate with stacked deposition layers
  • Method for producing a substrate with stacked deposition layers
  • Method for producing a substrate with stacked deposition layers

Examples

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Embodiment Construction

[0020] figure 1 A first embodiment of a photovoltaic cell produced according to the method of the invention is shown as a specific example with a substrate having stacked deposited layers on opposite surfaces of the substrate. The cell comprises a photovoltaic material 100 formed from a bulk material such as p-Si, with a thin oppositely doped Si layer at the edge, an emitter 200e. The capping layer 200 has a passivation layer 100e-200ar interface comprising: a metal oxide provided to reduce the surface defect density of Si, an anti-reflection coating 200ar to enhance light trapping, and a protective layer 201 composed of a metal oxide to protect the battery. Photovoltaic cells can typically be produced in the following steps, a passivated emitter and back cell type from c-Si material.

[0021] The substrate is first ground to remove visible damage, texture, and n-type doping is applied to produce emissive layer 100e, for example, by diffusion of phosphorous into the wafer su...

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Abstract

A stacked substrate is produced using an apparatus including an injector head device, and comprises the steps of providing an injector head device comprising a gas bearing pressure arrangement and injecting bearing gas from the gas bearing pressure arrangement against opposite substrate surfaces, to balance the substrate supportless in a conveying plane in the injector head device. Iteratively the steps are performed of contacting opposite substrate surfaces with a first precursor gas from a first precursor supply; and with a second precursor gas from a second precursor supply respectively, first and second precursor gases supplied in first and second deposition spaces arranged opposite and facing respective sides of the substrate; establishing relative motion between the deposition space and the substrate in the conveying plane, in order to convey the substrate to reactant spaces arranged in the injector head device opposite and facing respective sides of the substrate; and providing at least one of a reactant gas, plasma, laser-generated radiation, and / or ultraviolet radiation, in any or both reactant spaces for reacting any of the first and second precursor gas after deposition on at least part of the substrate surface in order to obtain an atomic layer on each of opposite sides of the substrate surface. First and second precursor gases are at least in one of the iterations supplied simultaneously on opposite substrate surfaces.

Description

technical field [0001] The present invention relates to a method for producing substrates, in particular photovoltaic cells, with stacked deposited layers and devices therefor. The invention also relates to a method for atomic layer deposition on the surface of a substrate. Background technique [0002] The use of stacked deposited layers is very advantageous for surface passivation of c-Si solar cells. For example, recent publications show the use of SiO 2 -Al 2 o 3 of layers. Requires low temperature SiO 2 deposition process to prevent the degradation of doped c-Si, but so far low temperature deposited SiO 2 The quality is not good enough. [0003] Atomic layer deposition is a method of depositing ultra-thin layers from a variety of different target materials. For example, atomic layer deposition differs from chemical vapor deposition in that the precursor gases used are supplied alternately or spatially separated by atomic layer deposition. During a first process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/54H01L21/677
CPCC23C16/45546C23C16/45551C23C16/545C23C16/4583C23C16/45529C23C16/45595H01L21/67784C23C16/345C23C16/403C23C16/45536
Inventor 罗杰·马赛厄斯·威廉·格特泽恩塞巴斯蒂安·安东尼厄斯·弗朗西斯库斯·戴尔利森约瑟夫·阿德里亚努斯·玛丽亚·德斯瓦特阿德里亚努斯·约翰尼斯·彼得鲁斯·玛丽亚·维梅尔
Owner SOLAYTEC