Supercharge Your Innovation With Domain-Expert AI Agents!

Arrangement method for Schottky diodes

A layout method and a technology of diodes, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as inconvenient logic functions, and achieve the effect of simple structure and low price

Inactive Publication Date: 2015-03-11
NO 47 INST OF CHINA ELECTRONICS TECH GRP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This setting method is not convenient for implementing logic functions through integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Arrangement method for Schottky diodes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] like figure 1 As shown, the lateral Schottky diode has a cathode 2 and an anode 3 formed on an N-type substrate 1, wherein an N+ type barrier region is formed between the cathode 2 and the N-type substrate 1 . The ion implanted in the potential barrier region is phosphorus.

[0015] Taking the lateral Schottky diodes of two discrete devices as an example, in order to realize the logic function, the N+-type substrates 1 of the two lateral Schottky diodes are formed on the same substrate 4, and the N+-type substrates 1 of the two are formed between with gaps. The isolation region 5 is grown on the substrate 4 in the gap formed by the N+ type substrates 1 of the two lateral Schottky diodes, and fills up the gap. After such arrangement, the two lateral Schottky diodes are symmetrically distributed on the substrate 4 with the isolation region 5 as the center, and their two cathodes and two anodes are located on the same side. The same material can be used for the isolatio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an arrangement method for Schottky diodes. The method comprises the following steps: a, providing a base body with a substrate and an epitaxial layer; b, forming an isolation region in the epitaxial layer, wherein the isolation region is used for dividing the epitaxial layer into a first epitaxial layer and a second epitaxial layer which are isolated from each other on one hand, and borders on the substrate on the other hand; c, transversely arranging cathodes and anodes on one side, far away from the substrate, of the first epitaxial layer, and transversely arranging cathodes and anodes on one side, far away from the substrate, of the second epitaxial layer. According to the method provided by the invention, the Schottky diodes of a plurality of discrete devices can be effectively and directly formed on the same base body, and the integrated Schottky diodes cannot influence one another; in addition, the cathodes and the anodes of the Schottky diodes are positioned on the same transverse side of the base body, so that the space can be effectively reduced and a logical function can be realized; an integrated device manufactured by the method is simple in structure and low in price.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to an integration method of a lateral Schottky diode. Background technique [0002] Commonly used Schottky diodes have a vertical structure, that is, the anode and the cathode are respectively arranged on two opposite sides of the main body of the silicon wafer. This setting method is inconvenient to implement logic functions through integration. Contents of the invention [0003] In view of the problems existing in the prior art, the present invention provides a method for arranging Schottky diodes, comprising: a. providing a base body having a substrate and an epitaxial layer; b. forming an isolation region in the epitaxial layer, the On the one hand, the isolation region divides the epitaxial layer into a first part of the epitaxial layer and a second part of the epitaxial layer that are spaced apart from each other; The cathode and the anode are arranged laterally on one si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
CPCH01L29/872H01L29/66143
Inventor 唐冬刘旸白羽徐衡刘剑
Owner NO 47 INST OF CHINA ELECTRONICS TECH GRP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com