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Single-photon light source element and manufacturing method thereof

A single-photon light source and component manufacturing technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of difficulty in manufacturing single-photon light source components and inconsistent sizes of quantum dots, and achieve high dimensional uniformity, uniform position and size sexual effect

Active Publication Date: 2015-03-18
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the top-down or bottom-up method is used to fabricate the quantum dot structure, but the position of the quantum dot structure produced by these two methods is random, and the size of the quantum dot is inconsistent, which makes it difficult to fabricate a uniform size. Photon light source components

Method used

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  • Single-photon light source element and manufacturing method thereof
  • Single-photon light source element and manufacturing method thereof
  • Single-photon light source element and manufacturing method thereof

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Embodiment Construction

[0033] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0034] See figure 1 , first provide a precursor 100, the precursor 100 includes a substrate 110 and an undoped low-temperature GaN layer 120, an undoped high-temperature GaN layer 130, an N-type GaN layer grown sequentially on the substrate 110 layer 140 , a quantum well layer 150 and a structural layer 160 .

[0035] The substrate 110 can choose sapphire (A l2 o 3 ), silicon carbide (SiC), silicon (Si) or gallium nitride (GaN), depending on the desired physical and optical properties and cost budget.

[0036] The material of the quantum well layer 150 is In x Ga 1-x N (0y Ga 1-y N (0≤y≤1), wherein, when y=0, the material of the structural layer 160 is GaN, and when y=1, the material of the structural layer 160 is AlN. The quantum well layer 150 and the structural layer 160 constitute a single quantum well structure. It should be noted that, the prese...

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Abstract

A single photon source die includes a first semiconductor layer, a plurality of columnar structures formed on the first semiconductor layer, a second semiconductor layer formed on the columnar structures. Each columnar structure includes a bottom layer, a single photon point layer and a connecting layer. The single photon point layer includes a plurality of single photon points.

Description

technical field [0001] The invention relates to a manufacturing method of a single-photon light source element, in particular to a manufacturing method of a single-photon light source element including quantum dots with uniform size and fixed position, and the single-photon light source element manufactured by the method. Background technique [0002] Single-photon light sources are the most important components for implementing quantum information (especially quantum cryptography and quantum computers), and single semiconductor quantum dots are the most suitable materials for making solid-state single-photon light sources. Usually, the top-down or bottom-up method is used to fabricate the quantum dot structure, but the position of the quantum dot structure produced by these two methods is random, and the size of the quantum dot is inconsistent, which makes it difficult to fabricate a uniform size. Photon light source components. Contents of the invention [0003] In view...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/04H01L33/00
CPCH01L33/0075H01L33/32H01L33/20H01L33/42H01L33/08H01L33/0095H01L33/06H01L2933/0083H01L33/18
Inventor 邱镜学林雅雯凃博闵黄世晟
Owner ZHANJING TECH SHENZHEN