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One-time programmable memory, method of operation and programming thereof, and electronic system

A memory and programming selection technology, applied in information storage, static memory, instruments, etc., can solve problems such as inappropriate

Active Publication Date: 2019-03-01
ATTOPSEMI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Figure 3a and Figure 3b The fuse elements 81 and 85 are relatively large structures, which makes them unsuitable for some applications

Method used

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  • One-time programmable memory, method of operation and programming thereof, and electronic system
  • One-time programmable memory, method of operation and programming thereof, and electronic system
  • One-time programmable memory, method of operation and programming thereof, and electronic system

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Embodiment Construction

[0054] The structural principle and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings:

[0055] The embodiment of the present invention relates to a programmable resistance element using a P+ / N well junction diode as a programming selector. The diode can include P+ and N+ active regions in an N-well region. The P+ and N+ active regions of the N-well region can be easily fabricated by a standard CMOS process, and the programmable resistance element of the present invention can be effectively fabricated and cost reduced. For standard SOI, FinFET or similar technologies, the isolation active area can be made into a programmable selector diode or a programmable resistance element. The programmable resistance element can also be included in an electronic system.

[0056] In one or more embodiments, the junction diode can be fabricated by standard CMOS technology and used as a one-time programmable (OTP) element, ...

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PUM

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Abstract

The present invention provides a One-Time Programmable (OTP) memory and operating and programming methods thereof, and an electronic system. The OTP memory comprises: a plurality of OTP cells, at least one of the OTP cells including at least: an OTP element including at least an electrical fuse coupled to a first supply voltage line; and a program selector coupled to the OTP element and to a second supply voltage line, wherein at least a portion of the electrical fuse has at least one extended area that has reduced or substantially no current flowing therethrough, and wherein the OTP element is configured to be programmable by applying voltages to the first and second supply voltage lines and by turning on the program selector to thereby change the OTP element into a different logic state. Embodiments of programmable resistive device cells using junction diodes as program selectors are disclosed. The programmable resistive devices can be fabricated using standard CMOS logic processes to reduce cell size and cost.

Description

Technical field [0001] The present invention relates to a programmable memory element, and particularly relates to a programmable resistance element used in a memory array. Background technique [0002] Programmable resistance element usually means that the resistance state of the element can be changed after programming. The resistance state can be determined by the resistance value. For example, the resistive element may be a One-Time Programmable (OTP) element (such as an electrical fuse), and the programming method may apply a high voltage to generate a high current through the OTP element. When a high current flows through the OTP element by turning on the programming selector, the OTP element will be burned to a high or low resistance state (depending on whether it is a fuse or an anti-fuse) for programming. [0003] Electrical fuse is a common OTP, and this kind of programmable resistance element can be connected within a segment, such as polysilicon, silicided polysilicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/16
Inventor 庄建祥
Owner ATTOPSEMI TECH CO LTD