A soi ESD two-level protection network

Abstract

The invention provides an SOI ESD two-stage protection network. The SOI ESD two-stage protection network comprises a first-stage protection network and a second-stage protection network, wherein the first-stage protection network is composed of a first diode and a second diode, the second-stage protection network comprises a PMOS transistor, an external resistor, a buffer resistor and a silicon control rectifier, the first end of the buffer resistor is connected with the input end of the first protection network, the second end of the buffer resistor is connected with the P type layer and the N well region of the silicon control rectifier and serves as the output end of the second-stage protection network, the grating end and the body end of the PMOS transistor are connected with a power line, the source end of the PMOS transistor is connected with the input end of the second-stage protection network, the drain terminal of the PMOS transistor is connected with the first end of the external resistor and connected with the P well region of the silicon control rectifier, the second end of the external resistor is connected with a ground wire, and the N type layer of the silicon control rectifier is connected with the ground wire. The dynamic trigger principle is adopted for the SOI silicon control rectifier, the reaction speed of the second-stage protection can be greatly increased, and the possibility that the internal circuit gate breakdown can be greatly lowered.

Description

technical field [0001] The invention belongs to the field of integrated circuit design, in particular to an SOI ESD two-stage protection network. Background technique [0002] Silicon-on-insulator (SOI) is the silicon integrated circuit technology of the twenty-first century. The large-scale commercial use of SOI began in the late 1990s. In 1998, IBM used SOI technology to achieve breakthroughs in high-speed, low-power, high-reliability mainstream microelectronic products. IBM carried out large-scale production of SOI logic devices in 1999, and reached the yield of bulk silicon devices. In 2002, IBM launched the new 5AS / 400 server series with SOI technology, which is almost 4 times faster than the same model. In addition, IBM announced the largest investment in its history in October 2000, spending $5 billion on large-scale production of advanced chip technologies, one of which is SOI technology. With the success of IBM, other companies have followed suit. From 2001 to 2...

AI Technical Summary

Problems solved by technology

However, in the traditional two-level input protection structure, because the secondary protection devices such as GGMOS are usually static breakdown, the breakdown voltage is high, and the response speed is slow

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