59results about How to "Reduce the possibility of breakdown" patented technology

The invention relates to a composite material J type longitudinal wall positioning integral forming tool. A foundation coating is arranged on a coating forming tool. A J type longitudinal wall is arranged in the designated position on the upper surface of the foundation coating. An inner longitudinal wall forming tool is arranged on the inner surface of the J type longitudinal wall through a rubber compensation layer, and the inner form of the J type longitudinal wall is completely filled with the inner longitudinal wall forming tool. The outer surface of the J type longitudinal wall is coated with an outer longitudinal wall forming tool. A cuboid structure without a cavity is formed through the outer longitudinal wall forming tool, the inner longitudinal wall forming tool and the J type longitudinal wall. A positioning beam is connected with the coating forming tool through positioning lug pieces. The positioning beam stretches across the outer longitudinal wall forming tool. The top of the positioning beam is connected with the upper surface of the outer longitudinal wall forming tool through a fixing member. Specific to the structural characteristics of a carbon fiber composite material J type wall, the problems of excursion of the longitudinal wall axis size, rib-line size and longitudinal wall shape in the manufacturing process of the J type wall are solved through the optimal design of an existing tool structure.

A high voltage P type silicon-on-insulator metal oxide semiconductor pipe comprises a semiconductor substrate. An insulator buried oxide layer, a P type doped semiconductor area and an N well area are arranged on the semiconductor substrate, while a field oxide layer, a metal layer, a gate oxide, a polysilicon gate and an oxide layer are arranged on the surface of the device. The metal oxide semiconductor pipe is characterized in that a barrier oxide layer is arranged on a buried oxide layer and is positioned below the gate oxide; a channel area is formed between the barrier oxide layer and gate oxide; an N type inversion layer is arranged in the P type doped semiconductor area and is positioned on the lower surface of the field oxide layer between a P type drain area and a P type source area. With such a structure, electrons induced on an interface where the P type doped semiconductor area is connected with the buried oxide layer gather on the bottom of the P type doped semiconductor area, greatly increasing the charge density at the interface, therefore, a thinner buried oxide layer can bear higher vertical breakdown voltage.

The invention provides a drive control circuit and a household appliance, the drive control circuit comprises a self-holding relay, whereina moving contact of the self-holding relay is connected to apower grid system, and the power grid system can be controlled to supply power to a load; a Bridge circuit, wherein The bridge circuit is configured to output a pulse signal to the control end of theself-hold relay, the pulse signal is a high-level pulse signal or a low-level pulse signal; wherein the first control end of the self-hold relay receives a high-level pulse signal; Meanwhile, when thesecond control end of the self-holding relay receives the low-level pulse signal, the moving contact of the self-holding relay performs action switching, and keeps the state after the previous actionswitching before receiving the next pulse signal, and the action switching is switched from the closing state to the opening state or from the opening state to the closing state. Through the technical scheme of the invention, the power consumption of the driving control circuit is reduced, and meanwhile, the damage risk caused by electric leakage and device temperature rise is reduced, so that the service life is prolonged.

The invention discloses a flame retardant yarn, a fabric and clothing capable of preventing the splashing of molten metal. The range of wool mass contained in the flame retardant yarn as a percentageof flame retardant viscose mass of silicone nitrogen series is 30.769%-157.895%. The flame retardant yarn, the fabric and the clothing contain the three kinds of fiber of wool, silicon nitrogen flameretardant viscose and nylon; nylon is a non-flame retardant fiber; the mass ratio of the three kinds of fiber is as follows: 20-60% of wool, 38-65% of flame retardant viscose of the silica nitrogen series, and 2-15% of nylon. The flame retardant fabric and clothing conform to the aluminum water splash test of EN ISO 9185-2008, the mass of the protective splash aluminum water is larger than or equal to 100 g, larger than or equal to 200 g or larger than or equal to 350 g, and accords with the molten iron splash test of EN ISO9185-2008, the mass of the protective splash molten iron is larger than or equal to 60 g, larger than or equal to 120 g or larger than or equal to 200 g; meanwhile the flame retardant test of EN ISO 15025-2003A1 is satisfied, the afterflame is less than or equal to 2 seconds, smoldering is less than or equal to 2 seconds, no melting and dripping phenomenon appears, and no burning holes appear; the flame retardant yarn meets the test of EN ISO 5077-2008, the washingshrinkage rate is larger than or equal to -10% and less than or equal to 10%.

The invention provides a grid protection circuit and power electronic equipment. The grid protection circuit comprises a main transmission line, a reference module, a comparison module, and a voltage stabilization module, wherein the main transmission line is connected between a grid driving module and the grid of an MOS transistor; the reference module is used for generating a reference signal; two input ends of the comparison module are respectively connected with the grid driving module and the reference module for comparing a grid driving signal and the reference signal; and the voltage stabilization module is connected between the output end of the main transmission line and the ground wire, and the driving end of the voltage stabilization module is connected with the output end of the comparison module. When the grid driving signal is larger than or equal to the reference signal, the comparison module outputs an on signal to the voltage stabilization module to control the voltage stabilization module to be on, the voltage stabilization module outputs a clamp voltage signal to the grid of the MOS transistor, and the clamp voltage signal is smaller than the grid driving signal. Through the technical scheme of the invention, the reliability and the accuracy of over current protection are enhanced.

The invention discloses a rotating anode CT bulb tube employing elastic metal fibers and graphene for improving heat dissipation, and belongs to the field of vacuum electronic medical devices. The bulb tube mainly comprises a tube housing, a rotating anode target connected in the tube housing, and a cathode which is located in the tube housing and is opposite to the rotating anode target. The rotating anode target is connected with the tube housing through a bearing. The tube housing comprises a cathode ceramic segment and a metal segment. The cathode ceramic segment is in a cylindrical structure with a central hole, and two ends of the cathode ceramic segment are respectively provided with an annular groove. The depth of one annular groove at one end of the interior of the metal segment is less than the depth of the annular groove at one end of the exterior of the metal segment. Moreover, an inner end face of the annular groove at the end of the exterior of the metal segment is lower than an outer end face. Nano-level graphene powder is disposed in a bearing ball cavity, and two ends of the bearing ball cavity are provided with stopping pieces. The elastic metal fibers are disposed between the surface of the rotating anode target and the opposite surface of the tube housing, and contact with the tube housing and a target head.

The invention discloses a method for increasing breakdown voltage of a double-Damascus structure dielectric barrier layer film. In the method, the deposited dielectric barrier layer is made of high-tensile stress silicon nitride; and the H content in the Si-H bond and the N-H bond in the silicon nitride is smaller than 20 percent. With the using of the method for increasing the breakdown voltage of the double-Damascus structure dielectric barrier layer film, the H content in the Si-H bond and the N-H bond in a dielectric barrier layer formed by the silicon nitride is smaller than 20 percent, and with the reducing of the low hydrogen content, in actual application, the probability that the dielectric barrier layer is broken down by the electricity is greatly reduced.

The invention discloses an electrical system of a reduction furnace with polycrystalline silicon rods and a starting method of the reduction furnace with the polycrystalline silicon rods, and particularly relates to the starting method of the reduction furnace with the twenty-four pairs of polycrystalline silicon rods. The electrical system comprises the twenty-four pairs of polycrystalline silicon rods, wherein the four pairs of polycrystalline silicon rods are distributed on an inner ring, the eight pairs of polycrystalline silicon rods are distributed on a middle ring, and the twelve pairs of polycrystalline silicon rods are distributed on an outer ring; the twenty-four pairs of polycrystalline silicon rods are all connected with a power-adjusting-cabinet power source, the eight pairs of polycrystalline silicon rods distributed on the middle ring are further connected with a high-voltage starting power source through a middle-ring isolating switch, the four pairs of polycrystalline silicon rods distributed on the inner ring are further connected with four sets of thyristor modules, and each pair of polycrystalline silicon rods on the inner ring corresponds to a set of antiparallel thyristors. According to the method, after the middle ring is broken down through a high voltage, electricity is completely supplied by a normal power source, breakdown is conducted on the inner ring in an alternating mode under the baking action of the middle ring, and the outer ring is directly started under the baking action of the inner ring and the middle ring after the inner ring is broken down.

A radiant tube (4) for guiding a charged particle stream (10) has a hollow cylindrical isolation core (6) directly encompassing a beam-guiding hollow volume (8). The isolation core (6) is formed from a dielectrically acting carrier substrate (14) and an electrical conductor (16) held therein. The conductor (16) is divided into a plurality of conductor loops (20) completely encompassing the circumference of the isolation core (6) at different axial positions of the isolation core (6). The conductor loops (20) are galvanically connected to each other.

The invention discloses a high-voltage double-diffused metal-oxide-semiconductor (DMOS) device, comprising a drift region, a drain region, a channel region, a source region, a gate oxidation layer, a gate and a buried layer, wherein the drift region is positioned between the channel region and the gate region; the source region is formed on the channel region; and the buried layer is buried in the drift region and connected with the channel region. The buried layer and the channel region is respectively provided with a first conducting type, and the source region, the drain region and the drift region are respectively provided with a second conducting type. The buried layer can guide high potential of the drift region introduced by the drain region to a deep part of the drift region, so that the electric field of the drift region is two-dimensionally uniformly distributed, the accumulation of the electric field on the surface of the drift region is reduced, and therefore, the breakdown probability occurring on the surface of the drift region is reduced, and the breakdown voltage is increased. On the basis of increasing the breakdown voltage, by increasing the doping concentration of the drift region or reducing the size of the device, the on resistance of the DMOS can be reduced and the characteristics of the device can be improved.

The invention provides an SOI ESD two-stage protection network. The SOI ESD two-stage protection network comprises a first-stage protection network and a second-stage protection network, wherein the first-stage protection network is composed of a first diode and a second diode, the second-stage protection network comprises a PMOS transistor, an external resistor, a buffer resistor and a silicon control rectifier, the first end of the buffer resistor is connected with the input end of the first protection network, the second end of the buffer resistor is connected with the P type layer and the N well region of the silicon control rectifier and serves as the output end of the second-stage protection network, the grating end and the body end of the PMOS transistor are connected with a power line, the source end of the PMOS transistor is connected with the input end of the second-stage protection network, the drain terminal of the PMOS transistor is connected with the first end of the external resistor and connected with the P well region of the silicon control rectifier, the second end of the external resistor is connected with a ground wire, and the N type layer of the silicon control rectifier is connected with the ground wire. The dynamic trigger principle is adopted for the SOI silicon control rectifier, the reaction speed of the second-stage protection can be greatly increased, and the possibility that the internal circuit gate breakdown can be greatly lowered.

The invention relates to a FPC electromagnetic shielding film. The FPC electromagnetic shielding film comprises a first protective layer, an adhesive layer, a metal layer, a second protective layer and a carrier film which are sequentially arranged from top to bottom, wherein the adhesive layer is used for bonding the first protective layer 1 and the metal layer, and the adhesive layer contains conductive nickel powder. The electromagnetic shielding film is attached to the surface of an FPC, can prevent mutual influence among the FPCs in an electronic product, and has high breakdown resistanceand high shielding effect on electromagnetism.

The invention discloses an impact-resistant chip resistor and a manufacturing method thereof, and relates to the technical field of resistors, the impact-resistant chip resistor comprises a resistor body, the resistor body further comprises a substrate mounted at the bottom, the top of the substrate is fixedly connected with an impedance element, the top of the impedance element is provided with a base layer sealing layer, and the top of the base layer sealing layer is fixedly connected with the substrate. The top of the base sealing layer is fixedly connected with the second sealing layer, one side of the substrate is provided with the inner end face, the outer surface of the inner end face is provided with the middle end face, the outer surface of the middle end face is fixedly connected with the outer end face, the top of the substrate is provided with the first conductive plate, and one side of the first conductive plate is fixedly connected with the ceramic tube. One end of the ceramic tube is provided with a second conductive plate, the outer surface of the ceramic tube is sleeved with a nickel wire, and the substrate is also provided with a conductive plate I. The chip resistor has the advantages of low manufacturing cost, long service life, high temperature resistance, oxidation resistance and good corrosion resistance, and the impact resistance, safety and stability of the chip resistor are improved.