59results about How to "Reduce the possibility of breakdown" patented technology

The invention discloses a flame retardant yarn, a fabric and clothing capable of preventing the splashing of molten metal. The range of wool mass contained in the flame retardant yarn as a percentageof flame retardant viscose mass of silicone nitrogen series is 30.769%-157.895%. The flame retardant yarn, the fabric and the clothing contain the three kinds of fiber of wool, silicon nitrogen flameretardant viscose and nylon; nylon is a non-flame retardant fiber; the mass ratio of the three kinds of fiber is as follows: 20-60% of wool, 38-65% of flame retardant viscose of the silica nitrogen series, and 2-15% of nylon. The flame retardant fabric and clothing conform to the aluminum water splash test of EN ISO 9185-2008, the mass of the protective splash aluminum water is larger than or equal to 100 g, larger than or equal to 200 g or larger than or equal to 350 g, and accords with the molten iron splash test of EN ISO9185-2008, the mass of the protective splash molten iron is larger than or equal to 60 g, larger than or equal to 120 g or larger than or equal to 200 g; meanwhile the flame retardant test of EN ISO 15025-2003A1 is satisfied, the afterflame is less than or equal to 2 seconds, smoldering is less than or equal to 2 seconds, no melting and dripping phenomenon appears, and no burning holes appear; the flame retardant yarn meets the test of EN ISO 5077-2008, the washingshrinkage rate is larger than or equal to -10% and less than or equal to 10%.

A method is provided for fabricating a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, 200) on a semiconductor wafer. The method includes providing a substrate containing an epitaxial layer (201), forming a gate oxide layer (203) on a surface of the epitaxial layer (201) by a first oxidization process, forming a polysilicon gate (202) on the gate oxide layer (203) within a gate region, forming a body region (205) in the epitaxial layer (201), forming a source region (204) in the body region (205) of the epitaxial layer (201), and oxidizing the source region (204) to form oxide (207) in a gap between the polysilicon gate (202) and the source region (204) on a surface of the source region (204) by a second oxidization process.

The invention relates to a lateral double diffusion metal oxide silicon (LDMOS) transistor and a method for making the same. The LDMOS transistor comprises a substrate, a first groove, a second groove, a deep N-type pit, a first N-type pit, a second N-type pit, a P-type pit, a gate electrode region, a source region and a drain region. By the LDMOS transistor provided by the invention, the breakdown voltage can be effectively improved, the service of the LDMOS can be prolonged and the performance of the LDMOS can be improved under the condition of no increase of the width of the gate electroderegion; the source region and the drain region can be interchanged due to a symmetric structure to improve the performance of the transistor and make the circuit design easy; moreover, the probability of breakdown generated between the drain region and the gate region can be reduced under the condition of no increase of the size of the gate electrode region, so that the service life of the transistor is prolonged.

The invention discloses a rotating anode CT bulb tube employing elastic metal fibers and graphene for improving heat dissipation, and belongs to the field of vacuum electronic medical devices. The bulb tube mainly comprises a tube housing, a rotating anode target connected in the tube housing, and a cathode which is located in the tube housing and is opposite to the rotating anode target. The rotating anode target is connected with the tube housing through a bearing. The tube housing comprises a cathode ceramic segment and a metal segment. The cathode ceramic segment is in a cylindrical structure with a central hole, and two ends of the cathode ceramic segment are respectively provided with an annular groove. The depth of one annular groove at one end of the interior of the metal segment is less than the depth of the annular groove at one end of the exterior of the metal segment. Moreover, an inner end face of the annular groove at the end of the exterior of the metal segment is lower than an outer end face. Nano-level graphene powder is disposed in a bearing ball cavity, and two ends of the bearing ball cavity are provided with stopping pieces. The elastic metal fibers are disposed between the surface of the rotating anode target and the opposite surface of the tube housing, and contact with the tube housing and a target head.

The present invention provides a method for preparing a semiconductor device, comprising: providing a substrate, on which a first dielectric layer, a second dielectric layer and a patterned photoresist layer are sequentially formed, and the patterned photoresist layer is formed in sequence on the substrate. The resist layer has an opening; a dry etching process is used to etch the second dielectric layer along the opening to reveal the surface of the first dielectric layer, and the opening extends to the surface of the first dielectric layer surface; continuing to etch the first dielectric layer along the opening by a wet etching process to reveal the surface of the substrate, and the opening extends to the surface of the substrate; and, removing the patterning A field oxide layer is formed on the surface of the substrate at the bottom of the opening; the invention improves the smoothness of the interface between the field oxide layer and the substrate, improves the avalanche resistance of the device, thereby improving the the electrical properties of semiconductor devices.

The invention discloses an electrode sleeve, which includes a conductive sleeve body, an electrode cavity that can be inserted into an electrode is provided in the sleeve body, an electrode insertion port is provided on the upper part of the electrode cavity, and an electrode cavity is provided in the electrode cavity. The side wall is provided with a conductive first elastic extrusion part that is in contact with the electrode, and the outer side of the sleeve is provided with a conductive second elastic extrusion part that is in contact with the outer electrode. The lower part of the sleeve body is provided with a stop card that can be engaged with the external bayonet. The invention aims to provide an electrode cover with excellent contact with the output electrode and input electrode and a good fixation, and a detachable xenon headlamp using the electrode cover with the advantages of anti-breakdown, easy disassembly and installation, safety and stability.

The invention discloses an electrical system of a reduction furnace with polycrystalline silicon rods and a starting method of the reduction furnace with the polycrystalline silicon rods, and particularly relates to the starting method of the reduction furnace with the twenty-four pairs of polycrystalline silicon rods. The electrical system comprises the twenty-four pairs of polycrystalline silicon rods, wherein the four pairs of polycrystalline silicon rods are distributed on an inner ring, the eight pairs of polycrystalline silicon rods are distributed on a middle ring, and the twelve pairs of polycrystalline silicon rods are distributed on an outer ring; the twenty-four pairs of polycrystalline silicon rods are all connected with a power-adjusting-cabinet power source, the eight pairs of polycrystalline silicon rods distributed on the middle ring are further connected with a high-voltage starting power source through a middle-ring isolating switch, the four pairs of polycrystalline silicon rods distributed on the inner ring are further connected with four sets of thyristor modules, and each pair of polycrystalline silicon rods on the inner ring corresponds to a set of antiparallel thyristors. According to the method, after the middle ring is broken down through a high voltage, electricity is completely supplied by a normal power source, breakdown is conducted on the inner ring in an alternating mode under the baking action of the middle ring, and the outer ring is directly started under the baking action of the inner ring and the middle ring after the inner ring is broken down.

The invention relates to a dispersing agent for a wet electroceramic body-connecting process and a wet body-connecting method. The dispersing agent is prepared from sodium polyacrylate and is applied to the wet body-connecting process of electroceramic bodies. The dispersing agent is an aqueous solution of the sodium polyacrylate with the weight percentage concentration of 0.2 to 1.5 percent; the using temperature of the dispersing agent is 25 to 50 DEG C in summer and autumn, and 15 to 40 DEG C in winter and spring; and the hydration time is 7 to 35 minutes. The wet body-connecting method by using the sodium polyacrylate as the dispersing agent comprises the following steps of: preparing the dispersing agent, namely weighing the sodium polyacrylate according to the requirement, putting the sodium polyacrylate into a container, adding hot water slowly, and adding water with stirring; dissolving the materials fully, stirring uniformly, and adding water until the required concentration is achieved; and stirring uniformly, and preparing the dispersing agent.

A high voltage P type silicon-on-insulator metal oxide semiconductor pipe comprises a semiconductor substrate. An insulator buried oxide layer, a P type doped semiconductor area and an N well area are arranged on the semiconductor substrate, while a field oxide layer, a metal layer, a gate oxide, a polysilicon gate and an oxide layer are arranged on the surface of the device. The metal oxide semiconductor pipe is characterized in that a barrier oxide layer is arranged on a buried oxide layer and is positioned below the gate oxide; a channel area is formed between the barrier oxide layer and gate oxide; an N type inversion layer is arranged in the P type doped semiconductor area and is positioned on the lower surface of the field oxide layer between a P type drain area and a P type source area. With such a structure, electrons induced on an interface where the P type doped semiconductor area is connected with the buried oxide layer gather on the bottom of the P type doped semiconductorarea, greatly increasing the charge density at the interface, therefore, a thinner buried oxide layer can bear higher vertical breakdown voltage.

The invention relates to a composite material J type longitudinal wall positioning integral forming tool. A foundation coating is arranged on a coating forming tool. A J type longitudinal wall is arranged in the designated position on the upper surface of the foundation coating. An inner longitudinal wall forming tool is arranged on the inner surface of the J type longitudinal wall through a rubber compensation layer, and the inner form of the J type longitudinal wall is completely filled with the inner longitudinal wall forming tool. The outer surface of the J type longitudinal wall is coated with an outer longitudinal wall forming tool. A cuboid structure without a cavity is formed through the outer longitudinal wall forming tool, the inner longitudinal wall forming tool and the J type longitudinal wall. A positioning beam is connected with the coating forming tool through positioning lug pieces. The positioning beam stretches across the outer longitudinal wall forming tool. The top of the positioning beam is connected with the upper surface of the outer longitudinal wall forming tool through a fixing member. Specific to the structural characteristics of a carbon fiber composite material J type wall, the problems of excursion of the longitudinal wall axis size, rib-line size and longitudinal wall shape in the manufacturing process of the J type wall are solved through the optimal design of an existing tool structure.