86results about How to "Reduce bridging" patented technology

A proppant having low surface friction is described, which is useful in hydrocarbon recovery. Methods of making low surface friction proppants are further described, as well as uses thereof.

A leadless hyperthermia electronic solder and preparing method thereof are disclosed. The solder is composed of alloy elements according to flowing percentage by weight: 10-224546014f Sb, 1-84550160f Cu, 0.01-224446740f Ni, 0-0.012f X, residue percent of Sn; wherein X represents zero species, one species or composition of optimal several species of Ga, P and mixed rare earth; the fusion point of the solder is between 240 DEG C to 320 DEG C, the tensile strength is 58-84MPa; the preparing method of the solder is: thermal insulating the prepared each alloy element at a temperature ranging from 850 DEG C to 900 DEG C for 1-2 hours by using a vacuum melting furnace or an antivacuum smelting furnace to melt them sufficiently, and mixing them sufficiently before discharged from the furnace, pouring, solidifying to obtain the solder; the solder is made into at least one of solder master alloy, solder block, soldered ball, soldering ring, soldering foil, soldering powder or soldering cream; the solder is provided with a higher fusion point to improve the fusion activity of solder, enhanced credibility of device, good antioxidant ability and excellent humectation performance.

A support device (1) for supporting a length of material (8) wherein the support device includes: at least one support finger (4,5) for supporting the length of material (8) which applies an initial load to the support finger (5); the support device characterised in that the support finger (5) no longer supports the length of material (8) when the support finger is placed directly or indirectly under a load substantially greater than the initial load.

The gas-solid reactor includes the main parts of main body, solid feeding port, tail gas exhausting port, stirring shaft, stirring blades, truncated cone solid discharger, turned conic gas distributor, screw conveyor, air sealed slide valve and baffle. The main body includes cylindrical upper part and conic lower part; the solid feeding port and the tail gas exhausting port are in the top of thereactor; the stirring shaft with fixed stirring blades is perpendicular to the central axis of the reactor; the inner wall of the reactor has one or several layers of baffles set; the solid discharger is in the lower part of the reactor; the gas distributor with homogeneously distributed holes is below the solid discharger; and the bottom of the reactor is connected to the screw conveyor; and theslide valve is set on the material discharging pipe of the screw conveyor.

The various embodiments disclosed herein relate to methods and compositions for reducing the bridging of treated seeds, including some that also enhance the survivability of any beneficial microorganisms included in the composition or mixed therewith and/or enhance the yield of the plants that grow from the seed to which the treatment is applied. The various compositions can include sugar and oil, while other embodiments include sugar, oil, and an emulsifying agent, and certain embodiments include sugar, oil, and at least one microorganism. In various embodiments, the oil can be, for example, a heavy lubricating oil such as mineral oil or silicone oil, and the sugar can be, for example, a non-reducing sugar.

The invention relates to a preparation method of high-vibration-compaction low-specific-surface-area lithium iron phosphate made by a positive pole material, and relates to lithium ion. The preparation method comprises the following steps of: mixing a lithium source compound, an iron source compound and a phosphorus source compound according to stoichiometric proportion by a watering wet method according to 70%-85% of solid content, adding a metal-ion-doped oxide, a primary carbon source and a dispersant agent, uniformly mixing, and carrying out spray granulation after a ball mill treatment, thus obtaining a dry powder body; pretreating the dry powder body in an inert atmosphere, adding water according to 70%-85% of solid content after cooling the dry powder body, meanwhile, adding a secondary carbon source and the dispersant agent, and uniformly stirring, thus obtaining the dry powder body through the ball mill treatment and the spray granulation; and carrying out the first heat treatment on the dry powder body in the inert atmosphere, and carrying out high temperature treatment and air flow classification, thus obtaining the high-vibration-compaction low-specific-surface-area lithium iron phosphate made by a positive pole material. The processing property of the positive pole material of lithium iron phosphate is obviously improved without influencing other electrochemistry properties.

The invention relates to a composite material J type longitudinal wall positioning integral forming tool. A foundation coating is arranged on a coating forming tool. A J type longitudinal wall is arranged in the designated position on the upper surface of the foundation coating. An inner longitudinal wall forming tool is arranged on the inner surface of the J type longitudinal wall through a rubber compensation layer, and the inner form of the J type longitudinal wall is completely filled with the inner longitudinal wall forming tool. The outer surface of the J type longitudinal wall is coated with an outer longitudinal wall forming tool. A cuboid structure without a cavity is formed through the outer longitudinal wall forming tool, the inner longitudinal wall forming tool and the J type longitudinal wall. A positioning beam is connected with the coating forming tool through positioning lug pieces. The positioning beam stretches across the outer longitudinal wall forming tool. The top of the positioning beam is connected with the upper surface of the outer longitudinal wall forming tool through a fixing member. Specific to the structural characteristics of a carbon fiber composite material J type wall, the problems of excursion of the longitudinal wall axis size, rib-line size and longitudinal wall shape in the manufacturing process of the J type wall are solved through the optimal design of an existing tool structure.

A manufacturing technique for constructing passive electronic components in vertical configurations is disclosed. Electrically passive components are constructed in a structure that is substantially perpendicular to target platform including a first plane to provide a larger electrode contact area and a smaller physical dimension. Passive components structured to be substantially perpendicular toa plane associated with a target platform can be directly connected to pad contacts of an integrated circuit or substrate or can be embedded in a package to reduce the area overhead of a passive component while improving the effectiveness of the passive components in their applications.

A method for fabricating a semiconductor device includes forming a plurality of pillar structures over a substrate, forming gate electrodes over sidewalls of the pillar structures, forming a sacrificial layer buried between the pillar structures, etching the sacrificial layer and the substrate to form trenches in the substrate, forming first inter-layer insulation patterns buried over the trenches and removing the remaining sacrificial layer at substantially the same time, and forming second inter-layer insulation patterns over the first inter-layer insulation patterns and buried between the pillar structures.

A device uses magnetic force generated by a magnet to intensify compaction pressure applied to a composite laminate.

The invention relates to the technical field of environmental protection equipment, and discloses waste plastic recycling and granulating production equipment, which comprises an extruder, a hopper, amelting screw and an extrusion screw, two groups of sliding chutes and slideways are arranged at positions, corresponding to the upper part of the hopper, of the extruder, and the slideways are movably connected with an air cylinder through sliding blocks. According to the waste plastic recycling and granulating production equipment provided by the invention, when molten plastic rotates and movesalong with the extrusion screw, the two filtering pieces are inserted into a groove of the extrusion screw in turn to filter out incompletely molten plastic or impurities, so that the purity of meltis improved, and the quality of regenerated plastic is improved; and secondly, plastic on the inner wall of a hopper body is extruded through airflow generated when the air cylinder moves, one side ofthe plastic where bridging occurs is suspended, movement of plastic fragments in the hopper is assisted, then disturbance of the plastic fragments can be increased through rapid pulse airflow, the bridging probability is further reduced, the conveying speed of the broken fragments is increased, so that the conveying speed is matched with the processing speed of a granulator.

The invention provides a method for improving the morphology of a capacitor hole, and the method at least comprises the following steps: providing a semiconductor substrate, and sequentially depositing an etching stop layer, at least one capacitor sacrificial oxide layer, a first capacitor supporting layer and a third capacitor sacrificial oxide layer on the semiconductor substrate; and etching the third capacitor sacrificial oxide layer until the first capacitor support layer stops, and forming a capacitor hole upper opening in the third capacitor sacrificial oxide layer. The width of the upper opening of the capacitor hole is greater than that of the required capacitor hole, and a barrier layer is deposited on the side wall and the top of the upper opening of the capacitor hole to realize miniaturization of the opening, thereby reducing the photoetching difficulty; the barrier layer can protect the side wall of the capacitor hole, so that the top morphology of the capacitor opening is kept relatively good, the inclination is relatively small, and the possibility of bridging at the top is greatly reduced. Nitride is filled after the capacitor hole is etched to form the supportinglayer at the top of the capacitor hole, so that the etching difficulty of the capacitor hole is reduced.

The invention discloses a carbon nanometer crystal hydrogen storage material and the making method. The constituents of the material includes 60-90wt% coal based carbon with hexagonal net grid layer crystal structure and the particle diameter is 20-100nm, 10-40wt% of one or several metal from Na, Al, Ti, V, Cr, Fe, Ni, Zn, Mo, and Pd. The method includes the following steps: taking alkali washing and acid washing to coal, after 1000-1600 degree centigrade carbonization, adding the metal powder, under 0.5-3MPa hydrogen pressure, taking ball milling for 0.5-8h. It has the advantages of large hydrogen storage density, low raw material cost, simple technology, etc.

A structure includes a substrate, a gate structure over the substrate, a dielectric layer over the substrate, and a cap over a gate electrode of the gate structure. Top surfaces of the dielectric layer and gate electrode are co-planar. The gate structure extends a gate lateral distance between first and second gate structure sidewalls. The cap extends between first and second cap sidewalls. A first cap portion extends from a midline of the gate structure laterally towards the first gate structure sidewall and to the first cap sidewall a first cap lateral distance, and a second cap portion extends from the midline laterally towards the second gate structure sidewall and to the second cap sidewall a second cap lateral distance. The first cap lateral distance and the second cap lateral distance are at least half of the gate lateral distance.

The invention provides a method for forming a grid, and the method comprises the steps: providing a substrate, and enabling the substrate to be provided with a first region and a second region; forming a pseudo grid and an interlayer dielectric layer; forming a sacrificial layer; removing the pseudo grid in the first region, so as to form a first opening in the interlayer dielectric layer in the first region; forming first metal layers on the surface of the sacrificial layer in the second region, the surface of the interlayer dielectric layer in the first region and in the first opening; and removing a part of the first metal layers and a part of the sacrificial layer through chemical mechanical grinding, so as to form the first grid. The beneficial effects of the invention lies in that the pseudo grid in the second region is enabled not to be exposed in the process of chemical mechanical grinding, and a problem of sinking caused by the excessive removal of the pseudo grid in the second region through the chemical mechanical grinding is solved, thereby enabling a surface formed by the pseudo grid and the interlayer dielectric layer to be flatter and more consistent in height, and facilitating the reduction of possible bridging during the subsequent forming of the grid.