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Manufacturing method of mosfet and mosfet

A manufacturing method and source region technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as gate oxide layer gate oxide breakdown, so as to improve service life and reduce the possibility of breakdown , the effect of increasing the thickness

Active Publication Date: 2015-09-09
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a method for manufacturing a MOSFET and a MOSFET to solve the problem of gate oxide breakdown in the gate oxide layer at the edge of the gate region of the MOSFET, thereby improving the service life of the MOSFET

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  • Manufacturing method of mosfet and mosfet
  • Manufacturing method of mosfet and mosfet
  • Manufacturing method of mosfet and mosfet

Examples

Experimental program
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Embodiment 1

[0049] This embodiment provides a method for manufacturing a MOSFET. After the source region is formed and before the dielectric layer is formed, the method includes:

[0050] forming a gate oxide layer and a polysilicon gate on the surface of the epitaxial layer;

[0051] forming a source region within the surface of the epitaxial layer;

[0052] Oxidation of the source region is performed to form an oxide on the surface of the source region in the space between the polysilicon gate and the source region.

[0053] It should be noted that the epitaxial layer in this embodiment can be N - ~N + type structure, the thickness of the epitaxial layer can be determined according to the specific application requirements of the device, and the epitaxial layer can be located on the front or back of the semiconductor wafer.

[0054] In this step, the specific method for forming the gate oxide layer can be: using a thermal oxidation process to form a gate oxide layer on the surface of ...

Embodiment 2

[0062] This embodiment provides a specific MOSFET manufacturing method. On the basis of the method provided in Embodiment 1, in this embodiment, before the source region is formed, it may further include:

[0063] On both sides of the polysilicon gate, a body region is formed by ion implantation and impurity push well;

[0064] The source region is formed within the body region.

[0065] Using the polysilicon gate as a mask, ion implantation is performed on both sides of the polysilicon gate, and impurities are pushed into wells to form body regions. In a subsequent step, the source region is formed by implanting impurities in the body region.

[0066] In this embodiment, before forming the gate oxide layer and the polysilicon layer, a conductive protection region for protecting devices and implementing device isolation may also be formed in the semiconductor wafer, and the implementation may include:

[0067] forming an oxide protection layer on the surface of the epitaxial...

Embodiment 3

[0085] Corresponding to the foregoing method embodiments, this embodiment further provides a MOSFET.

[0086] The MOSFET includes an epitaxial layer, a source region formed in the surface of the epitaxial layer, a gate oxide layer and a polysilicon gate formed on the surface of the epitaxial layer;

[0087] On the surface of the source region of the MOSFET, in the gap between the polysilicon gate and the source region, an oxide layer formed by a thermal oxidation growth process is arranged.

[0088] Preferably, the thickness of the oxide layer may be 1-3 times the thickness of the gate oxide layer.

[0089] Since this embodiment obtains the device structure embodiment by applying the above method embodiment, the similarities thereof can be referred to each other, and will not be repeated here.

[0090] In the embodiment of the present invention, the oxide formed on the surface of the source region fills the gap between the edge of the polysilicon gate and the source region, a...

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Abstract

A method is provided for fabricating a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, 200) on a semiconductor wafer. The method includes providing a substrate containing an epitaxial layer (201), forming a gate oxide layer (203) on a surface of the epitaxial layer (201) by a first oxidization process, forming a polysilicon gate (202) on the gate oxide layer (203) within a gate region, forming a body region (205) in the epitaxial layer (201), forming a source region (204) in the body region (205) of the epitaxial layer (201), and oxidizing the source region (204) to form oxide (207) in a gap between the polysilicon gate (202) and the source region (204) on a surface of the source region (204) by a second oxidization process.

Description

Technical field: [0001] The invention relates to the field of semiconductor manufacturing, in particular to a MOSFET manufacturing method and a MOSFET. Background technique: [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are required to achieve faster computing speeds. With larger data storage capacity and more functions, semiconductor chips are developing towards higher component density and high integration, and the requirements for their physical structure and manufacturing process are also getting higher and higher. [0003] Taking MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) as an example, the existing manufacturing process usually includes the following steps: a gate oxide layer and polysilicon are sequentially formed on the surface of the epitaxial layer of the semiconductor wafer Layer; sequentially through the steps of coating photoresist, engraving gate pattern structure on the photoresist, polysi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/316H01L29/78H01L29/06
CPCH01L29/41766H01L29/66727H01L29/42368H01L29/7802H01L29/66712
Inventor 阿里耶夫·阿里伽日·马高米道维奇
Owner CSMC TECH FAB2 CO LTD
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