Method for increasing breakdown voltage of double-Damascus structure dielectric barrier layer film

A technology of dielectric barrier and thin film breakdown, which is applied in the field of technology, can solve problems such as electrical breakdown along metal wires, and achieve the effect of reducing the possibility of electrical breakdown

Inactive Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is used to solve the problem that the traditional thin film in the prior art is easy to cause electrical breakdown along the metal wire

Method used

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  • Method for increasing breakdown voltage of double-Damascus structure dielectric barrier layer film
  • Method for increasing breakdown voltage of double-Damascus structure dielectric barrier layer film
  • Method for increasing breakdown voltage of double-Damascus structure dielectric barrier layer film

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Embodiment Construction

[0022] In order to make the technical means, creative features, objectives and effects of the invention easy to understand, the present invention will be further elaborated below in conjunction with specific illustrations.

[0023] Please see figure 1 Shown, a kind of method that increases the breakdown voltage of double damascene dielectric barrier film, its process method comprises the steps:

[0024] Step 1, depositing a dielectric barrier layer 3 on the substrate 1 containing the copper wire 2, so that the dielectric barrier layer covers the copper wire 2 and the substrate 1;

[0025] Step 2, depositing an interlayer dielectric layer 4 on the upper surface of the dielectric barrier layer 3;

[0026] Step 3, depositing a dielectric anti-reflection layer 5 on the upper surface of the interlayer dielectric layer 4;

[0027] Step 4, laying a photoresist layer 6 on the dielectric antireflection layer 5 .

[0028] After the above steps are completed, the device is formed, suc...

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Abstract

The invention discloses a method for increasing breakdown voltage of a double-Damascus structure dielectric barrier layer film. In the method, the deposited dielectric barrier layer is made of high-tensile stress silicon nitride; and the H content in the Si-H bond and the N-H bond in the silicon nitride is smaller than 20 percent. With the using of the method for increasing the breakdown voltage of the double-Damascus structure dielectric barrier layer film, the H content in the Si-H bond and the N-H bond in a dielectric barrier layer formed by the silicon nitride is smaller than 20 percent, and with the reducing of the low hydrogen content, in actual application, the probability that the dielectric barrier layer is broken down by the electricity is greatly reduced.

Description

technical field [0001] The invention relates to a process method, in particular to a method for increasing the breakdown voltage of a double damascene dielectric barrier film. Background technique [0002] With the gradual reduction of the critical dimensions of semiconductors, the interconnection material in the back stage has gradually transitioned from aluminum to copper. Because copper is difficult to etch and is relatively easy to diffuse in the dielectric, copper interconnection is widely used in double damascene structure technology, and a dielectric layer with certain barrier properties is used as a dielectric barrier layer. [0003] A typical dielectric barrier layer is silicon nitride, which is formed by the reaction of silane and ammonia in a plasma environment. The film contains a large amount of hydrogen (>20%), mainly in the form of Si-H and N-H. Among them, the hydrogen content of Si-H bond and N-H bond is also high, so that the possibility of breakdown vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/318
Inventor 徐强张文广郑春生陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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