Lateral double diffusion metal oxide silicon (LDMOS) transistor and method for making same

Abstract

The invention relates to a lateral double diffusion metal oxide silicon (LDMOS) transistor and a method for making the same. The LDMOS transistor comprises a substrate, a first groove, a second groove, a deep N-type pit, a first N-type pit, a second N-type pit, a P-type pit, a gate electrode region, a source region and a drain region. By the LDMOS transistor provided by the invention, the breakdown voltage can be effectively improved, the service of the LDMOS can be prolonged and the performance of the LDMOS can be improved under the condition of no increase of the width of the gate electroderegion; the source region and the drain region can be interchanged due to a symmetric structure to improve the performance of the transistor and make the circuit design easy; moreover, the probability of breakdown generated between the drain region and the gate region can be reduced under the condition of no increase of the size of the gate electrode region, so that the service life of the transistor is prolonged.

Description

technical field [0001] The present invention relates to a semiconductor transistor and a manufacturing method thereof, more particularly, the present invention relates to a lateral double diffusion Metal Oxide Silicon (LDMOS) transistor and a manufacturing method thereof. Background technique [0002] Semiconductor transistors sometimes need to work at operating voltages (for example, greater than 15kv) that exceed the normal operating environment or not be broken down. Since the lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) is a semiconductor transistor with a relatively high breakdown voltage, it has been more and more widely used in this respect. In addition to the advantages of high operating voltage, relatively simple process, and easy compatibility with other processes, LDMOS also has the characteristics of excellent high power, gain and linearity. [0003] A common LDMOS transistor in the prior art includes a deep N-type well formed on a substr...

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problem of low breakdown voltage in the above-mentioned prior art, the present invention provides a method for manufacturing a lateral double-diffused metal-oxide-semiconductor transistor, including:

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