A kind of small size semiconductor laser and its preparation method

Abstract

The invention provides a small-sized semiconductor laser, and the periodic size of the semiconductor laser is ≤150 μm. The semiconductor laser is a pure bar structure or a shoulder structure. A method for preparing the above-mentioned small-sized semiconductor laser, comprising the following steps: preparing an ohmic contact layer on a semiconductor laser chip, and preparing a die pattern with a periodic size ≤ 150 μm through photolithography and etching; Protect the P side of the chip; thin the substrate of the chip; clean the semiconductor laser chip and put it into the evaporation table: evaporate the P side electrode, and turn over the N side electrode after the evaporation of the P electrode is completed. The invention reduces the pattern period from 200 μm to 150 μm, and the output is about 1.3 times of the original. The preparation process of the invention has simple steps, saves raw materials used in production and man-hours; at the same time, problems such as scratches and pollution on the P surface are reduced, and the quality of the P surface is improved.

Description

technical field [0001] The invention relates to a small-sized semiconductor laser and a preparation method thereof, belonging to the technical field of low-power semiconductor lasers. technical background [0002] The outstanding feature of the current double heterojunction planar strip semiconductor laser is the ridge waveguide structure, which can effectively perform the functions of current confinement and light confinement. [0003] As a feature, semiconductor laser devices are required to have fundamental transverse mode oscillation in which no higher-order modes are generated. In order to obtain fundamental transverse mode oscillation using a semiconductor laser device, it is necessary to limit the ridge width to 4-5 μm or less. Therefore, on the premise of meeting the requirements of the chip package size, the die graphics cycle can be reduced as much as possible, and the chip output rate can be improved. [0004] At the same time, the ohmic contact and Schottky con...

AI Technical Summary

Problems solved by technology

[0007] In the traditional process, in order to ensure the quality of the interface, strict cleaning is required before the preparation of P and N electrodes, and quality problems such as P electrode contamination and scratches are prone to occur in the subsequent process of P electrode preparation.

However, this process obviously reduces production efficiency and increases costs

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