A preparation method of germanium carbide film with high hardness and variable refractive index
A technology of refractive index and high hardness is applied in the field of preparation of germanium carbide thin films, which can solve the problems of not fully satisfying the practical application requirements of infrared hard protective films and low film hardness, and achieve the effect of simple and controllable reactive sputtering process.
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[0030] The concrete steps of the preparation method of the germanium carbide film with high hardness and variable refractive index provided by the present invention are as follows:
[0031] 1) Substrate cleaning
[0032] First, wipe the substrate with a degreasing gauze dipped in a mixture of alcohol and ether (1:1 by volume); then use a degreasing gauze dipped in a polishing solution to polish the substrate; Liquid (volume ratio: 1:1) degreased gauze and absorbent cotton cloth to wipe the surface of the substrate until it is wiped clean.
[0033] 2) Pre-sputtering
[0034] use figure 1 The ion beam reactive sputtering coating device shown was used to coat Ge 1-x C x film.
[0035] Put the cleaned substrate into an ion beam sputtering coating machine, use Ge with a purity of 99.95% as the target material, Ar with a purity of 99.999% as the ion source working gas, and CH with a purity of 99.999% 4 as a reactive gas. Turn on the vacuum pump to evacuate, when the pressure ...
Embodiment 1
[0043] The preparation method of the germanium carbide film with high hardness and variable refractive index in this embodiment comprises the following steps:
[0044] 1) Select Ge with a diameter of 20 mm and a thickness of 1 mm as the substrate. First, wipe the substrate with a degreasing gauze dipped in a mixture of alcohol and ether (volume ratio 1:1), then use a degreasing gauze dipped in a polishing solution to polish the substrate, and then use a mixture of alcohol and ether in turn to polish the substrate. Liquid (1:1 by volume) absorbent gauze and absorbent cotton cloth to wipe the surface of the substrate until it is wiped clean;
[0045] 2) Pre-sputtering
[0046] Put the cleaned Ge substrate into an ion beam sputtering coating machine, use Ge with a purity of 99.95% as the target material, Ar with a purity of 99.999% as the ion source working gas, and CH with a purity of 99.999% 4 as a reactive gas. Turn on the vacuum pump to evacuate, when the pressure in the v...
Embodiment 2
[0051] This embodiment is similar to Embodiment 1, except that the ion source beam voltage in step 3) is 1000V, the beam current is 300mA, CH 4 The flow rate is 80sccm, and the coating time is 1h. Prepared Ge 1-x C x The hardness test curve of the film is as follows Figure 4 shown. The refractive index and extinction coefficient test analysis curve of the film is as follows: Figure 5 shown. Prepared Ge 1-x C x The hardness of the film is 9.2GPa, the refractive index of 8-12um is about 3.35, and the extinction coefficient is below 0.01.
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