Flip-chip led chip and manufacturing method thereof

An LED chip and manufacturing method technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of low light output efficiency of flip-chip LED chips, and achieve the benefits of performance and reliability, improve crystal quality, and improve luminous brightness. Effect

Active Publication Date: 2018-01-23
HANGZHOU SILAN MICROELECTRONICS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a flip-chip LED chip and its manufacturing method to solve the problem of low light extraction efficiency of the existing flip-chip LED chips

Method used

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  • Flip-chip led chip and manufacturing method thereof
  • Flip-chip led chip and manufacturing method thereof
  • Flip-chip led chip and manufacturing method thereof

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Embodiment Construction

[0075] The flip-chip LED chip and its manufacturing method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0076] In the embodiment of the present application, the manufacturing method of the flip-chip LED chip mainly includes: manufacturing a front-mounted LED chip, manufacturing an LED substrate, and connecting the front-mounted LED chip with the LED substrate. specific,

[0077] Production of formal LED chips, including:

[0078] Fabrication of LED substrate structure;

[0079] A stacked epitaxial epitaxial structure is formed on the sur...

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PUM

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Abstract

The invention provides a flip-chip LED chip and a manufacturing method thereof. In the flip-chip LED chip provided by the invention, by rationally designing the LED substrate structure, stacked epitaxial epitaxy structure, barrier layer and electrodes, and the LED substrate structure, The matching relationship between the stacked epitaxial epitaxial structure, the barrier layer and the electrode improves the luminous brightness of the flip-chip LED chip while improving its axial luminous brightness; at the same time, the LED substrate structure used can better improve the flip-chip The crystal quality of the epitaxy of the installed LED chip and the anti-breakdown ability of the flip-chip LED chip are also more conducive to the improvement of the performance and reliability of the flip-chip LED chip; moreover, a binary barrier layer is set in the front-mounted LED chip. The element blocking layer can better control the propagation direction of light inside the flip-chip LED chip while improving the luminous brightness and luminous uniformity. In addition, the manufacturing method of the flip-chip LED chip provided by the present invention has a simple process and strong operability, is suitable for large-scale commercial production, and is in line with the future development of the flip-chip LED chip.

Description

Technical field [0001] The invention relates to the technical field of semiconductor optoelectronic chip manufacturing, in particular to a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] With the improvement of people's living standards and the enhancement of environmental protection awareness, the pursuit of home environment, leisure and comfort is continuously improved. Lamps and lanterns have gradually shifted from a pure lighting function to a situation where decoration and lighting coexist. It is inevitable that solid-state cold light source LEDs with the dual advantages of lighting and decoration will replace traditional light sources into people's daily life. [0003] Since the commercialization of GaN-based LEDs in the early 1990s, after more than two decades of development, its structure has become mature and perfect, and it has been able to meet people's current needs for lighting decoration; but it must completely replace traditional ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/10H01L33/20H01L33/00
Inventor 张昊翔丁海生李东昇江忠永
Owner HANGZHOU SILAN MICROELECTRONICS
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