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scr components with temperature stabilizing properties

A technology of components and parts, applied in the field of SCR components with temperature stability characteristics, can solve the problems of increasing the risk of untimely conduction of thyristors

Active Publication Date: 2018-11-09
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These emitter short circuits 17 are known to improve the dV / dt behavior of the thyristor and thus increase the risk of untimely conduction of the thyristor by voltage peaks

Method used

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  • scr components with temperature stabilizing properties
  • scr components with temperature stabilizing properties
  • scr components with temperature stabilizing properties

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Experimental program
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Embodiment Construction

[0026] Figure 3A and Figure 3B A top view and a simplified cross-sectional view, respectively, of one embodiment of a thyristor. Figure 3B is along Figure 3A The dashed line B-B obtains the cross-sectional view. exist Figure 3A and Figure 3B , using the Figure 1A and Figure 1B The same reference numerals identify the same elements.

[0027] exist Figure 1A and Figure 1B In the thyristor, the emitter short circuit 17 is formed by the material of the layer 7 of p-type doped silicon. However, in Figure 3A and Figure 3B In the thyristor shown, some emitter shorts 17 initially made of P-type doped silicon are replaced by emitter shorts formed of light conductive porous silicon, denoted as 30 . The porous silicon of emitter short circuit 30 extends from cathode metallization 11 up to layer 7 , preferably through the entire thickness of region 9 and may extend partially in region 7 . In particular, the porous silicon of the emitter short 30 is resistive, so t...

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Abstract

The present disclosure relates to an SCR component with temperature stable characteristics. Vertically structured SCR-type components have a main upper electrode formed on a silicon region of a first conductivity type and itself formed in a silicon layer of a second conductivity type, wherein the region interrupts the area in which the material of the silicon layer is in contact with the upper electrode. in the first site, and in the second site filled with resistive porous silicon extending between the silicon layer and the electrode.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from French Patent Application No. 13 / 59295 filed September 26, 2013, which is hereby incorporated by reference to the fullest extent permitted by law. technical field [0003] The present disclosure relates to a vertically structured SCR type component and a method of manufacturing the same. Background technique [0004] A silicon controlled (SCR) type component is a component having a structure comprising a stack of at least four semiconductor layers and / or regions of alternating conductivity types. These components are, for example, thyristors, triacs, unidirectional or bidirectional Schottky diodes. [0005] Figure 1A and Figure 1B are the cross-sectional views of the thyristor, respectively. Figure 1B is along Figure 1A The dashed line B-B obtains the cross-sectional view. These figures schematically show a thyristor comprising a vertical stack of four sem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/74H01L29/06H01L29/41H01L21/332
CPCH01L29/06H01L29/41H01L29/66363H01L29/74H01L29/32H01L29/7408H01L29/0692H01L29/0839H01L29/102H01L21/2807H01L29/513H01L29/517H01L29/66545H01L21/306H01L29/0834
Inventor S·梅纳德
Owner STMICROELECTRONICS SRL