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Resistance change memory element

A memory element and resistance change technology, applied to electrical elements, static memory, read-only memory, etc., can solve the problem of long writing time and achieve the effect of easy mixing

Inactive Publication Date: 2015-04-15
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fast memory can keep the data after the power is cut off, so it is used for relatively small-capacity data storage, but the writing time is longer than DRAM

Method used

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Embodiment Construction

[0046] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0047] (1) Configuration of 2-electrode variable resistance memory element

[0048] figure 1 It is a cross-sectional view showing an example of a 2-electrode type variable resistance memory element. figure 1 The conventional 2-electrode variable resistance memory element 10 with two electrodes shown has a structure in which the lower electrode 5, the resistance variable insulating film 8, and the upper electrode 7 are sequentially laminated. 7 A voltage pulse is applied to change the resistance value of the resistance change insulating film 8 reversibly. The two-electrode variable resistance memory element 10 is laminated on the insulating film 5 and the base 11.

[0049] A method of manufacturing the 2-electrode variable resistance memory element 10 will be described. First, on the single crystal silicon substrate 11, a silicon oxide film is formed as the insulating film 5 ...

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Abstract

Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A) arranged on the first principal surface; and a gate electrode (19A) arranged on a second principal surface of the resistance change insulating film, the second principal surface being opposite to the first principal surface.

Description

Technical field [0001] The invention relates to a resistance change memory element. Background technique [0002] Currently, SRAM (Static Random Access Memory), DRAM (Dynamic RAM, dynamic random access memory), and fast memory are conventionally used as readable and writable memory. In addition to the shortcomings of volatility, SRAM cannot be increased in capacity due to its difficulty in high integration, but it can be accessed at high speeds and is therefore used for cache memories and the like. DRAM also has the disadvantage of being volatile. In addition, since it is a data-corrupted read-out type, a refresh operation must be performed during read-out. However, its ability to increase capacity is used in the main memory of personal computers. The fast memory can keep the data after the power is turned off, so it is used to save data of relatively small capacity, but the writing time is longer than that of DRAM. [0003] Compared with these conventional memories, new types of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105H01L45/00H01L49/00
CPCH01L45/04H01L45/1206H01L45/146H01L45/1226G11C13/0007G11C16/0466H10N70/25H10N70/253H10N70/823H10N70/8833H10N70/24G11C13/0097
Inventor 儿子精祐胜满德佐藤正幸笹岛裕一
Owner TAIYO YUDEN KK