Low-metal-etching photoresist stripping liquid and application thereof

Abstract

The invention discloses low-metal-etching photoresist stripping liquid and application thereof. The low-metal-etching photoresist stripping liquid the following components: (a) quaternary amine hydroxide, (b) alcohol amine, (c) a solvent, (d) a star copolymer with pigment adsorption groups and (e) silane with a specific structure. According to the low-metal-etching photoresist stripping liquid, the corrosion rate to metal can be effectively reduced, and particularly metallic aluminum are hardly corroded; meanwhile, photoresist and residues of the photoresist on a wafer can be effectively removed, so that the low-metal-etching photoresist stripping liquid has a good application prospect.

Description

technical field [0001] The invention discloses a metal low etching photoresist stripping solution and application thereof. Background technique [0002] In the manufacturing process of semiconductor components, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be removed before the next process. In the photoresist removal process, it is required to completely remove the unnecessary photoresist, and at the same time, not corrode any substrate, especially strictly control the corrosion of metal aluminum and copper. [0003] At present, the photoresist stripping solution is mainly composed of polar organic solvent, strong alkali and / or water, etc., and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the stripping solution or rinsing the semiconductor wafer with the stripping solution. For example, J...

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Problems solved by technology

However, increasing the alkalinity and operating temperature of the stripping sol

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