Manufacturing method of fully-automatically-aligned high-density groove gate field effect semiconductor device
A device manufacturing method and self-alignment technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high registration accuracy and difficulty in achieving higher density cells
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Embodiment approach 1
[0030] Fully self-aligned high-density trench gate field-effect semiconductor device manufacturing method, using polysilicon, the thermal oxidation of the interface movement and the insulation film commonly used in the process, has the characteristics of relatively high etching selectivity, and realizes the field effect of the trench structure. The effect device uses a photolithography plate in the original cell of the active area to realize the full self-alignment of the source area, contact hole (P+ injection) and groove gate. Taking DMOSFET as an example, the realized process steps:
[0031] Step 1: Perform P-well implantation on the surface of the N-type silicon wafer, form a P-well region by diffusion and push the junction, and form The oxide layer SiO2, the oxide layer as a subsequent deposition of polysilicon stress matching layer; as figure 1 shown.
[0032] Step 2, deposit polysilicon on the stress matching layer, and then deposit an oxide layer on the polysilicon;...
Embodiment approach 2
[0049]Fully self-aligned high-density trench gate field-effect semiconductor device manufacturing method, taking DMOSFET as an example, the process steps realized:
[0050] Step 1, perform P-well implantation on the surface of N-type silicon wafer, form P-well region by diffusion and push junction, and form The oxide layer SiO2, the oxide layer as the subsequent deposition of polysilicon stress matching layer.
[0051] Step 2: Deposit polysilicon on the stress matching layer, and then deposit an oxide layer on the polysilicon; thermal oxidation may also be used to grow an oxide layer on the polysilicon.
[0052] In step 3, photolithography is performed on the structure formed in step 2 to remove the oxide layer and polysilicon to form a trench etching window.
[0053] Step 4, depositing a TEOS film.
[0054] Step 5, perform Spacer etching, and form sidewalls on the side of the polysilicon, such as Figure 18 .
[0055] Steps 6 to 17 are the same as those in Embodiment 1.
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