Wafer processing device
A processing device and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low wafer processing efficiency and achieve the effect of improving wafer processing efficiency and simple structure
Active Publication Date: 2015-05-20
ACM RES SHANGHAI
View PDF5 Cites 14 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
This common wafer processing device generally only has a nozzle fixed under the wafer chuck, resulting in low wafer processing efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] In order to describe the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0035] refer to Figure 1 to Figure 5 , discloses a first embodiment of a wafer processing apparatus according to the present invention. Such as figure 1 As shown, a schematic cross-sectional structure diagram of the first embodiment of the wafer processing apparatus according to the present invention is disclosed. The wafer processing device includes: a cavity 110 , a wafer chuck 120 , a first rotating swing arm 130 , a first nozzle 140 , a second rotating swing arm 150 , a second nozzle 160 , a power supply and a driver. The cavity 110 has a bottom wall, a side wall and a top wall, and the side wall of the cavity 110 protrudes outwards to form a stepped portion 111, and the stepped portion 111 of the side wall of the cavity 110 is roug...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a wafer processing device. The wafer processing device comprises a cavity, a wafer chuck, a first rotating swing arm, a first nozzle, a second rotating swing arm, a second nozzle, a power source and a driver. The cavity comprises a bottom wall and a side wall, and the side wall of the cavity protrudes outwards to form a step portion; the wafer chuck is used for clamping a wafer; the first rotating swing arm comprises a rotating end and a tail end, the rotating end is arranged on the step portion of the side wall of the cavity, and the first rotating swing arm rotates around the rotating end of the first rotating swing arm; the first nozzle is arranged at the tail end of the first rotating swing arm and sprays electrolytic solution towards a to-be-processed surface of the wafer; the second rotating swing arm comprises a rotating end and a tail end, the rotating end is arranged on the step portion of the side wall of the cavity, and the second rotating swing arm rotates around the rotating end of the second rotating swing arm; the second nozzle is arranged at the tail end of the second rotating swing arm and sprays electrolytic solution to the edge of the to-be-processed surface of the wafer; the power source is electrically connected with the first nozzle and the second nozzle; the driver is connected with the wafer chuck and drives the wafer chuck to move up or down along a center axis of the wafer chuck or rotate around the center axis of the wafer chuck.
Description
technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a wafer processing device. Background technique [0002] Semiconductor devices are fabricated or processed on semiconductor wafers using many different processing steps, whereby transistors and interconnecting elements are formed. In order to electrically interconnect the transistor terminals associated with the semiconductor wafer, it is necessary to form conductive channels, vias, or similar structures in the dielectric material that is part of the semiconductor device. Channels and vias transmit electrical signals and power between transistors, internal circuits of the semiconductor device, and external circuits of the semiconductor device. [0003] In the process of fabricating the interconnection elements, the semiconductor wafer is subjected to processes such as masking, etching, and deposition to form the electronic circuits required for the semiconductor...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67017
Inventor 金一诺王坚王晖
Owner ACM RES SHANGHAI