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A method of manufacturing a reverse-resistance type insulated gate bipolar transistor

A technology of bipolar transistor and insulated gate type, which is applied in the production field of reverse resistance type insulated gate bipolar transistor, can solve problems such as easy occurrence of fragments, low yield, and reduced mechanical strength of silicon wafers, so as to improve mechanical strength, The effect of improving the yield and reducing the probability of fragmentation

Active Publication Date: 2019-03-22
JIANGSU R & D CENTER FOR INTERNET OF THINGS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the existing production method, after thinning the back of the silicon wafer, the mechanical strength of the silicon wafer is reduced. During the process of fabricating the back structure and V-shaped groove etching, debris is very easy to occur, resulting in low yield

Method used

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  • A method of manufacturing a reverse-resistance type insulated gate bipolar transistor
  • A method of manufacturing a reverse-resistance type insulated gate bipolar transistor
  • A method of manufacturing a reverse-resistance type insulated gate bipolar transistor

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Embodiment Construction

[0038] As mentioned in the background technology, using the existing manufacturing method, after thinning the back of the silicon wafer, the mechanical strength of the silicon wafer is reduced. During the process of fabricating the back structure and V-shaped groove etching, debris is very easy to occur, resulting in a low yield rate. Low.

[0039] Based on this, the present invention provides a method for fabricating a reverse-resistance type insulated gate bipolar transistor to overcome the above-mentioned problems in the prior art, including:

[0040] S1. Provide a first semiconductor substrate doped with the first conductivity type, the back side of the first semiconductor substrate is formed with a doped layer of the second conductivity type and a plurality of first isolation grooves;

[0041] S2. Provide a second semiconductor substrate doped with the second conductivity type, and bond the front surface of the second semiconductor substrate to the back surface of the fir...

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Abstract

The invention discloses a manufacturing method of a reverse-blocking insulated gate bipolar transistor. In the process of manufacturing the reverse-blocking insulated gate bipolar transistor, a first semiconductor substrate and a second semiconductor substrate are bonded together by adopting a bonding process, so that the mechanical strengths of the bonded semiconductor substrates are improved, the probability of fragments of the bonded semiconductor substrates in the manufacturing process is reduced, and the yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a method for manufacturing a reverse-resistance insulated gate bipolar transistor. Background technique [0002] RB-IGBT (Reverse Blocking-Insulated Gate Bipolar Transistor, Reverse Blocking Insulated Gate Bipolar Transistor) is a new type of power semiconductor device with reverse blocking capability, and its forward and reverse can withstand voltage. Ordinary IGBT (Insulated Gate Bipolar Transistor) can only be used as a forward switch. If the IGBT is used as a reverse switch at the same time, a blocking diode needs to be connected in series in the collector or emitter circuit. The RB-IGBT is equivalent to a common IGBT with a blocking diode connected in series in the collector circuit, so the RB-IGBT is used as a bidirectional switch compared with an ordinary IGBT integrating an independent diode chip, and the RB-IGBT semiconductor device not only occupies The b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/331H01L21/60
CPCH01L24/07H01L29/66325
Inventor 张文亮朱阳军卢烁今田晓丽滕渊
Owner JIANGSU R & D CENTER FOR INTERNET OF THINGS