Active Matrix Electroluminescence Display Device

Abstract

An active matrix electroluminescence display device, which includes a substrate, a plurality of first transistor elements, a first electrode layer, an organic light-emitting layer, a second electrode layer and a plurality of second transistor elements. The top surface of the substrate has a light emitting area and a peripheral circuit area located around the light emitting area. The plurality of first transistor elements and the plurality of second transistor elements are respectively located in the light-emitting area and the peripheral circuit area of ​​the substrate. The first electrode layer, the organic light-emitting layer and the second electrode layer are stacked on the substrate in sequence, and cooperate to form a plurality of organic light-emitting diodes arranged in an array in the light-emitting area to form a plurality of pixels, and these first transistor elements are respectively The organic light emitting diodes are electrically connected to control the organic light emitting diodes to emit light, and the organic light emitting layer covers at least one second transistor element.

Description

technical field [0001] The present invention relates to a display device, and in particular to an active matrix electroluminescence display device. Background technique [0002] Organic light emitting diodes have been used in displays. Such as Figure 1A As shown, a light emitting region 11 and three peripheral circuit regions 12 , 13 , 14 are disposed on the substrate 10 , and the peripheral circuit regions 12 , 13 , 14 are adjacent to the light emitting region 11 . However, since the active layer material of the thin film transistor (TFT) in the peripheral circuit area (12, 13 or 14) in the display has an energy gap close to that of ultraviolet (UV) light, the TFT element is quite sensitive to ultraviolet light . Irradiating ultraviolet light is a commonly used procedure in the display process, and after irradiating ultraviolet light, additional electron-hole pairs will be generated, which will cause extra electrons on the channel of the thin film transistor, causing the...

AI Technical Summary

Problems solved by technology

like Figure 1B As shown, after the traditional active matrix electroluminescent display device is irradiated by ultraviolet light, it causes a significant shift in the threshold voltage (Vth) of the thin film transistor

[0003] Therefore, due to the ultraviolet light or external ultraviolet light in the organic light-emitting diode process, the thin-film transistor will cause the thin-film transistor to not be completely turned off (light leakage in the dark state) and shift when the organic light-emitting diode display is operated in a dark state. Register (Shift Register, S / R), data multiplexer (Data Mux) and other drive circuits cannot operate normally, etc.

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