Check patentability & draft patents in minutes with Patsnap Eureka AI!

Writing control device and method

A technology for writing control and writing modules, which is applied in the direction of instruments, electrical digital data processing, etc., can solve the problems of increasing the number of memory writes, reducing efficiency, and reducing the efficiency of memory writing, so as to reduce the number of writes and improve the write rate. input efficiency

Inactive Publication Date: 2015-06-24
KTMICRO ELECTRONICS
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the memory generally adopts the method of page writing to improve the writing efficiency. For the case of writing a large amount of data, the data is written in pages. In this way, performing an erase operation on the content of the same page can solve the problem caused by repeated erasing and writing. The problem of reduced efficiency
But for the case of randomly writing a small amount of data, the small amount of data will be written on one page. If the memory adopts the page writing method, the entire page still needs to be written, which will cause a waste of time and reduce the storage capacity. write efficiency
[0004] In the prior art, when the bit width of the system bus is smaller than the bit width of the memory, the system bus sometimes issues half-word write and full-word write instructions in order to improve the execution efficiency. Width, so the system bus needs to perform more than two write operations to complete a half-word or full-word write operation instruction, that is, the system bus sends an instruction representing several consecutive write operations, for example: perform 4 consecutive write operations Operation instructions or instructions for two consecutive write operations, and at this time the memory will also perform a corresponding number of write operations, which increases the number of memory writes, and because each write to the memory takes a lot of time , thus reducing the write efficiency of the memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Writing control device and method
  • Writing control device and method
  • Writing control device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0023] Such as figure 1 As shown, it is a schematic structural diagram of the first embodiment of the writing control device of the present invention. The device is arranged between the system bus and the memory, and may specifically include: a detection module 11, a first writing module 12, a cache module 13 and a second writing module. input module 14, wherein the first writing module 12 is connected with the detection module 11, the cache module 13 is connected with the first writing module 12, the second writing module 14 is connected with the cache module 13, and the detection module 11 is connected with the second writing module Module 14 is connected.

[0024] In this embodiment, the detection module 11 is used to detect the state of the system bus; the first writing module 12 is used to write the content continuously written by the sys...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a writing control device. The device is arranged between a system bus and a memory and comprises a caching module, a detection module, a first writing-in module and a second writing-in module, wherein the detection module is used for detecting the status of the system bus; the first writing-in module is used for writing content continuously written by the system bus in the caching module when the status of the system bus is continuous writing-in status; the second writing-in module is used for suspending reading operation of the system bus when the status of the system bus is reading status and writing content cached in the caching module in the memory. The device is used for reducing the writing-in frequency of the memory and improving the writing-in efficiency of the memory.

Description

technical field [0001] The invention relates to the field of embedded systems, in particular to a writing control device and method. Background technique [0002] Today, with the development of electronic information, embedded systems are widely used, including home appliances, automotive electronics, aerospace, finance, personal consumer products and other fields. Embedded systems usually include a microcontroller and a non-volatile memory (Non Volatile Memory, NVM for short) used to store instructions and data. Programmable Read-Only Memory, referred to as: EEPROM) and EFLASH to achieve. Microcontrollers need to access these NVMs to complete instruction reading and data storage operations, and the reading speed of these NVMs is generally relatively fast, while the writing speed is relatively slow, so how to improve the writing speed of NVM Efficiency is an important issue. [0003] At present, the memory generally adopts the method of page writing to improve the writing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F13/16
Inventor 陈世柱
Owner KTMICRO ELECTRONICS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More