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Controlled exfoliation of Group III nitrides containing embedded exfoliation release planes

A technology of nitride and nitride layer, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of degraded substrate reuse and unusability

Inactive Publication Date: 2017-10-13
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, this technique cannot be used for GaN or ZnO substrates, silicon or silicon carbide, because these materials have optical bandgaps close to or smaller than GaN materials
Furthermore, the laser lift-off approach leads to the formation of group III elements at the point of laser contact, which degrades the reuse of the substrate

Method used

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  • Controlled exfoliation of Group III nitrides containing embedded exfoliation release planes
  • Controlled exfoliation of Group III nitrides containing embedded exfoliation release planes
  • Controlled exfoliation of Group III nitrides containing embedded exfoliation release planes

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Embodiment Construction

[0018] The present application will be described in more detail with reference to the following discussion and the accompanying figures of the application. It is noted that the drawings of the present application are provided for illustrative purposes and, therefore, they are not drawn to scale. In the following drawings and descriptions, the same elements are described with the same reference numerals.

[0019] In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present application. However, it will be understood by those skilled in the art that the present application may be practiced without these specific details with viable alternative process options. In other instances, well-known structures or process steps have not been described in detail in order to avoid obscuring various embodiments of the presen...

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Abstract

The present invention relates to controlled exfoliation of group III nitrides comprising embedded exfoliation release planes. The present invention provides controlled exfoliation of Group III nitrides comprising embedded exfoliation release planes. An exfoliation release plane embedded within the layer of Group III nitride material is formed. The spallation relief plane comprises a material having a different strain, a different structure and a different composition than said portion of group III nitride material providing said layer of group III nitride material and embedded in said spallation relief plane. The exfoliation release plane provides a weakened material plane region within the Ill-nitride material layer that can be used to release a portion of the Ill-nitride material from the initial Ill-nitride material layer during a subsequently performed exfoliation process. In particular, during the exfoliation process, crack initiation and propagation occurs within the exfoliation release plane embedded within the initial III-nitride material layer.

Description

technical field [0001] The present application relates to methods of forming semiconductor structures comprising Group III nitrides. More specifically, the present invention relates to a method of removing (ie, releasing) a portion of a Group III-nitride material from a multilayer stack comprising a Group-Ill-nitride material layer by exfoliation. Background technique [0002] Group III nitride materials are a unique family of semiconductor materials that can be used in a wide variety of applications including, for example, optoelectronics, photovoltaics, and lighting. Group III nitride materials are composed of nitrogen and at least one element from Group III of the periodic table, ie, aluminum (Al), gallium (Ga), and indium (In). Illustrative examples of some common gallium nitride compounds are GaN, GaAlN, and GaAlInN. By changing the Al, Ga and / or In composition within the III-nitride, the III-nitride material can be tuned along the electromagnetic spectrum; mainly fro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L33/00
CPCH01L21/0254H01L21/0262H01L21/76254H01L33/0062H01L21/02381H01L21/02433H01L21/02458H01L21/02664H01L21/304H01L21/7813H01L31/1892
Inventor C·巴伊拉姆S·W·比德尔K·E·福格尔J·A·奥特D·K·萨达那
Owner INT BUSINESS MASCH CORP