Waveguide structure, waveguide coupling structure, and preparation method

Abstract

The present invention provides three waveguide structures, including a protruding-type waveguide structure, a buried-type waveguide structure, and a redeposited-type waveguide structure. The three types of waveguide structures are all applied to a straight waveguide part of an arrayed waveguide in an SOI-based arrayed waveguide grating; the protruding-type waveguide structure includes two axisymmetrically disposed first ends, and the first end is sequentially divided into a first region, a second region, and a third region in a direction toward an axis of symmetry; and the waveguide structure includes a first silicon substrate layer, a second silicon substrate layer, a first silicon dioxide layer, a second silicon dioxide layer, and a first silicon waveguide layer. A corresponding method for producing a waveguide structure, and a waveguide coupling structure are further provided. The waveguide structure and the waveguide coupling structure that are provided in the present invention have advantages of a small size, low polarization dependence, and low temperature sensitivity, and a crosstalk value is greater than 25 dB, which meets a requirement of a passive optical network system, and provides feasibility for commercialization of the arrayed waveguide grating.

Description

technical field [0001] The invention relates to the field of optical communication devices, in particular to a waveguide structure, a waveguide coupling structure, and a preparation method. Background technique [0002] With the upgrading of network products, the size and power consumption of modules used in the network are constantly decreasing to meet the needs of continuous cost reduction and performance improvement. Due to its ultra-small size and low cost, silicon-based photonic devices have attracted extensive attention from the industry in recent years, and have become one of the key considerations in the upgrading of network products. [0003] In the prior art, the process error of the silicon waveguide has a great influence on the refractive index of the waveguide. This effect leads to random changes in the refractive index at different positions of the silicon waveguide, resulting in large random changes in the operating wavelength of silicon-based photonic device...

AI Technical Summary

Problems solved by technology

Second, the temperature sensitivity of silicon-based arrayed waveguide gratings is high, and there is no mature athermal solution, so a semiconductor refrigerator (TEC for short) is required for temperature control, which also increases power consumption

Third, due to the large difference in the refractive index of the silicon waveguide, the polarization dependence is very large

However, the crosstalk value of this scheme cannot meet the design requirements of optical splitters

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