Damascene process based on nanotube structure

Abstract

In various embodiments, a method for fabricating a metallization layer on a substrate is provided, wherein the method may include forming groups of nanotubes over a substrate, wherein the groups of nanotubes may be Arranging so that portions of the substrate are exposed, and forming metal over the exposed portions of the substrate between groups of nanotubes.

Description

technical field [0001] Various embodiments relate to damascene processes based on nanotube structures, such as carbon nanotube (CNT) structures. Background technique [0002] To overcome the need for better thermal and electrical conductivity in semiconductor manufacturing, metals that provide better electrical and thermal conductivity, such as copper, are increasingly being used instead of Metals such as aluminum are used for power metallization. The main obstacle of this approach is the structuring of the power metals in the FEOL (front-end-of-line) and BEOL (back-end-of-line). Metals such as copper cannot be structured using conventional methods (wet or dry etching) due to the unavailability of suitable etchants. Therefore, at the present stage, during the provision of power metallization, the metal is structured by a method known as dual Damascene, in which the semiconductor workpiece is patterned with open trenches formed, for example, in the oxide layer, The trench ...

AI Technical Summary

Problems solved by technology

The greater thickness of the photoresist and its structuring lead to higher costs and, moreover, technical problems with photolithography and resist strips can arise

Furthermore, conventional fabrication processes reach their application limits when copper structures need to be as thick as 50 μm

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