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Electronic beam inspection optimization method

An optimization method and electron beam technology, applied in the field of electron beam inspection, can solve the problems of small measured area and time-consuming chip image, and achieve the effect of avoiding chip damage

Active Publication Date: 2015-08-19
MACRONIX INT CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the E-Beam inspection tool is used to detect the surface structure of the chip, but because the E-Beam detection is a high-resolution detection method with a small test area, the detection time often depends on the size of the test area. It takes hours to tens of days
[0004] Therefore, recently, various methods have been used to shorten the time course of electron beam inspection by reducing the points to be tested, but it still takes a lot of time to obtain chip images and defects.

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Embodiment Construction

[0028] figure 1 It is a flow chart of electron beam detection optimization according to the first embodiment of the present invention.

[0029] exist figure 1 In this method, step 100 is firstly performed to obtain initial detection areas; that is, multiple initial detection areas in a certain chip are obtained, and the centers of these initial detection areas are defect points. for example Figure 2A That is, 12 initial inspection areas 200a, 202a, and 204a in the chip are displayed, and the centers of the initial inspection areas 200a, 202a, and 204a are defect points 200b, 202b, and 204b.

[0030] In detail, there are several methods for obtaining the initial detection area in this embodiment as follows. The first is to set the area where the critical dimension (CD) is below a predetermined value as the initial detection area. Since the lower the CD is, the more prone to defects, the CD can be used as the basis for setting the initial detection area. Moreover, the so-ca...

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Abstract

The invention discloses an electronic beam inspection optimization method. The electronic beam inspection optimization comprises the steps of acquiring a plurality of initial inspection areas in one chip, wherein the center of each initial inspection area is a defect point; then, re-generating a plurality of reset inspection areas which are not overlapped with one another, wherein each preset inspection area is the range which is covered by a same field-of-view (FOV), and at least one defect point exists in the range; and afterwards, converting the center of each reset inspection area to an inspection center point, and performing electronic beam inspection on the inspection center point.

Description

technical field [0001] The present invention relates to an electron beam detection method, and in particular to an electron beam detection optimization method. Background technique [0002] As the line width of the IC process continues to shrink, the control and monitoring of the critical dimension (CD) of the process is also more important. From the perspective of nano-generation semiconductor technology, it is even more difficult to accurately detect defects in the chip surface structure. [0003] At present, the E-Beam inspection tool is used to detect the surface structure of the chip, but because the E-Beam detection is a high-resolution detection method with a small test area, the detection time often depends on the size of the test area. It takes hours to tens of days. [0004] Therefore, various methods have been used recently to shorten the time course of electron beam inspection by reducing the points to be inspected, but it still takes a lot of time to obtain ch...

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 骆统杨令武杨大弘陈光钊
Owner MACRONIX INT CO LTD