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A kind of preparation method of nano silicon dioxide polishing sheet by hydrolytic sol-gel method

A technology of nano-silica and sol-gel method, which is applied in the direction of grinding/polishing equipment, manufacturing tools, epoxy resin coating, etc., and can solve the problems of inability to achieve high dispersion and mixing

Active Publication Date: 2017-04-05
QUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These two methods use ready-made silica sol, the crystal grains have been formed, and then mixed with resin binder, which cannot achieve high dispersion mixing

Method used

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  • A kind of preparation method of nano silicon dioxide polishing sheet by hydrolytic sol-gel method
  • A kind of preparation method of nano silicon dioxide polishing sheet by hydrolytic sol-gel method
  • A kind of preparation method of nano silicon dioxide polishing sheet by hydrolytic sol-gel method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) Add ethyl silicate (TEOS) dropwise to the solvent in a water bath at 50°C, and stir with a magnetic stirrer for 7 hours to hydrolyze the sol. The composition of the mixture is shown in the table below;

[0034] Table 1 Alkaline hydrolysis mixed solution composition

[0035]

[0036](2) Prepare resin glue solution (ingredients as shown in the table below) and add to the solution obtained in step (1) and stir and add 1.1g silane coupling agent (Shin-Etsu KBM-903), 0.8g polyether modified polysiloxane Alkane solution (Jiangxi Tiansheng QS302), 0.5g silicone defoamer (silok4013), 0.16g octadecyl dimethyl hydroxyethyl ammonium nitrate (Nantong Zhanyi antistatic agent SN), 1.9g Adhesive agent for special functional group polymer compound (Germany Jianuo CN-801 adhesive agent), continue to stir for 60 minutes, pour it into a sealed glass cup, and age it naturally at 25°C until the coating viscosity reaches 100cp, add 12.7g poly Amide epoxy curing agent (Shanghe SA-115)...

Embodiment 2

[0046] The operation was basically the same as in Example 1, except that ethyl silicate (TEOS) was added dropwise to the solvent in a water bath at 20° C., and the sol was hydrolyzed by stirring with a magnetic stirrer for 7 hours. The experimental results show that the lower stirring temperature (20°C) is not conducive to the hydrolysis and polycondensation reactions of TEOS, and the prepared polishing sheet is used to polish the end face of the fiber end ferrule on a centrally pressurized fiber end ferrule end face grinder. The polishing parameters As shown in Table 3 above, the end face of the optical fiber head before polishing is as follows: image 3 As shown in (a), the end face of the optical fiber head after polishing is as follows image 3 (b), from image 3 In (a), it can be seen that there are slight scratches on the end face of the fiber optic ferrule before polishing, and after polishing, from image 3 As can be seen in (b), fine scratches are not effectively re...

Embodiment 3

[0048] Operation is basically the same as in Example 1, except that the ammoniacal liquor (concentration 22%) in step (1) alkaline hydrolysis mixed solution is added in an amount of 6 g, and the mixed solution is stirred for 1 to 2 hours because the pH value has reached 10 The viscosity just reaches 100cp, and at this moment the ethyl silicate in the mixed solution is not completely hydrolyzed, and the silicon dioxide content is lower than 20%, and the polishing sheet made after coating cannot remove the scratch on the end face of the ferrule of the optical fiber head.

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Abstract

The invention provides a method of manufacturing nano-silica polished wafers by using a hydrolytic sol-gel method. The preparing process comprises the following steps: (1) adding ethyl silicate into a solvent for hydrolyzing of gel; (2) preparing a resin adhesive solution and adding the resin adhesive solution into the solution obtained in the first step; stirring the mixture; adding an additive into the mixture; continuously stirring the mixture for 30-90 minutes; pouring the mixture into a sealed container; allowing the mixture to age naturally on the condition of 15-28 DEG C until the mixture reaches a coating viscosity; adding a curing agent and continuously stirring the mixture for 100-150 minutes; (3) performing surface modification treatment on the surface of a film; (4) applying the coating solution obtained in the second step to the surface of the film obtained in the third step; (5) curing the obtained semi-finished products for 6-20 hours in a vacuum oven at the temperature of 80-130 DEG C to obtain nano-silica polished wafers. The nano-silica polished wafers have the characteristics of high solid content of silica particles on the polished film and dense and uniform distribution and have a favorable polishing effect.

Description

technical field [0001] The invention belongs to the field of precision grinding and polishing, and relates to a nano-silicon dioxide polishing sheet, in particular to a preparation method of a nano-silicon dioxide polishing sheet by a hydrolysis sol-gel method. Background technique [0002] As a new type of solid-state laser, fiber laser has the advantages of good heat dissipation characteristics and high beam quality. It has the tendency to replace carbon dioxide laser and diode-pumped solid-state laser in high-tech fields such as communication, processing, printing and military. Among them, the processing of the fiber end face is the key to the manufacture of the fiber laser system. On the one hand, the defects and scratches on the end face of the optical fiber will cause light scattering on the end face. If the defects and scratches appear in the fiber core area, it will make it impossible to generate oscillating laser light. A defect point with a diameter of tens of nano...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D18/00C09D133/00C09D175/04C09D163/00C09D7/12
CPCB24D18/009C08L2205/035C09D133/00C08L63/00C08L75/04
Inventor 冯凯萍周兆忠
Owner QUZHOU UNIV