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Semiconductor device structure and manufacturing method

A device structure, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2015-09-16
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These relatively new packaging technologies for semiconductor devices present manufacturing challenges

Method used

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  • Semiconductor device structure and manufacturing method
  • Semiconductor device structure and manufacturing method
  • Semiconductor device structure and manufacturing method

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Embodiment Construction

[0029] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and not intended to be limiting. For example, in the following description a first component formed over or on a second component may include embodiments in which the first and second components are in direct contact, and may also include forming a Embodiments where additional parts are added so that the first and second parts are not in direct contact. Also, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for brevity and clarity, and does not in itself dictate a relationship between the various embodiments and / or configurations described.

[0030]Moreover, for ease of description, spatially relative positional terms such as "bel...

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Abstract

A semiconductor device structure and a manufacturing method are provided. The method includes forming a conductive pillar over a semiconductor substrate. The method also includes forming a solder layer over the conductive pillar. The method further includes forming a water-soluble flux over the solder layer. In addition, the method includes reflowing the solder layer to form a solder bump over the conductive pillar and form a sidewall protection layer over a sidewall of the conductive pillar during the solder layer is reflowed.

Description

technical field [0001] The present invention relates to semiconductor device structures and manufacturing methods. Background technique [0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. The manufacture of semiconductor devices involves sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layers over a semiconductor substrate, and patterning various material layers using photolithography and etching processes to form circuit components and elements on a semiconductor substrate . [0003] The semiconductor industry continues to increase the integration density of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.) by continuing to reduce the minimum feature size, which allows more components to be integrated into a given area. The number of input and output (I / O) connections has incr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/522
CPCH01L2224/11914H01L2924/01013H01L2924/014H01L2924/01083H01L2924/01051H01L2224/11462H01L2924/01022H01L24/13H01L2924/01033H01L2224/13111H01L2224/11849H01L2224/13023H01L2224/1111H01L2924/01082H01L2924/01028H01L2924/01047H01L24/11H01L2924/01029H01L2924/01079H01L2224/10125H01L2924/0105H01L2924/01026
Inventor 李立国刘宜臻刘永盛赖怡仁陈俊仁郑锡圭
Owner TAIWAN SEMICON MFG CO LTD