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Film forming method and film forming apparatus

A film-forming method and technology of a film-forming device are applied in gaseous chemical plating, coatings, electrical components, etc., and can solve problems such as technologies that are not shown

Active Publication Date: 2015-09-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in these methods, the problem and the technology related to the problem are not shown

Method used

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  • Film forming method and film forming apparatus
  • Film forming method and film forming apparatus
  • Film forming method and film forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0072] In Experimental Example 1, the following experiment was conducted: It was confirmed that the supply time of the second reaction gas (oxygen) was changed variously in the process of forming a thin film having the above-mentioned four components of Si-O-CN How does the refractive index of the film change. For the treatment recipes other than the supply time of the second reaction gas, common conditions were used in each example.

[0073] As a result, by Figure 11 It can be seen that the refractive index decreases as the supply time of the second reaction gas increases, and therefore the relative permittivity (k) that has a correlation with the refractive index also decreases as the supply time of the second reaction gas increases.

[0074] Figure 12 The result of plotting the correlation between the supply time of the second reaction gas and the composition ratio of the thin film is shown. That is, the longer the supply time of the second reaction gas is, the lower t...

experiment example 2

[0076] In Experimental Example 2, the following results were shown: the effects of stopping the supply of the doping gas and stopping the vacuum exhaust in the reaction tube 12 while maintaining the reaction tube 12 during the process of doping the dopant element into the adsorption layer were determined respectively. The concentration of carbon element in the thin film when the time (retention time) of the sealed state is changed in various ways. In addition, in each example of this experiment, the supply time of the second reaction gas was set to 15 seconds.

[0077] As a result, such as Figure 13 As shown, as the holding time is prolonged, the carbon concentration contained in the thin film becomes higher.

[0078] In addition, the correlation between the carbon concentration contained in the film and the etching rate of the film with respect to hydrofluoric acid was measured. As a result, Figure 14 As shown, the higher the carbon concentration, the more difficult it is...

experiment example 3

[0080] In Experimental Example 3, it was confirmed that when the holding time and the number of repetitions of the step of vacuum evacuation after sealing the dopant gas in the reaction tube 12 were variously changed, the film quality of the thin film was lower than that of the wafer boat. How will the up and down directions of 11 change. Specifically, the holding time and the number of repetitions of each example were set as shown in the following table.

[0081] surface

[0082]

hold time

repeat times

Experimental example 3-1

240 seconds

1 time

Experimental example 3-2

120 seconds

2 times

Experimental example 3-3

60 seconds

4 times

[0083] Therefore, in each of Experimental Examples 3-1 to 3-3, the sum of the holding times is the same. In addition, in each of Experimental Examples 3-1 to 3-3, the thin film on the wafer W on the upper side of the wafer boat 11 and the thin film on the wafer W on t...

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Abstract

A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.

Description

technical field [0001] The present invention relates to a film forming method and a film forming device for forming a thin film on a substrate. Background technique [0002] As an apparatus for forming a thin film (such as a silicon nitride (Si-N) film) on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"), there is known a method in which a plurality of wafers are formed collectively in a vertical reaction tube. Film batch type vertical heat treatment device. As a specific film-forming method using this apparatus, for example, a raw material gas containing silicon and a reactive gas for nitriding the raw material gas (such as ammonia (NH 3 )) is the so-called ALD (Atomic Layer Deposition: Atomic Layer Deposition) method. [0003] In addition, as an object to which the silicon nitride film is applied, for example, side walls for holding side surfaces of gate electrodes among various parts constituting a semiconductor device can be mentioned. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34C23C16/455H01L21/67
CPCC23C16/26C23C16/24C23C16/458C23C16/45544C23C16/52C23C16/4412C23C16/30C23C16/4408C23C16/45529C23C16/45531
Inventor 铃木启介村上博纪菱屋晋吾门永健太郎小幡穣
Owner TOKYO ELECTRON LTD