Fin field effect transistor structure and manufacturing method thereof
A fin-type field effect and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult control of fin width intervals and complicated process steps
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[0030] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0031] A preferred embodiment of the present invention provides a method of forming a fin structure. Among them, an initial groove is formed on the substrate by photolithography and etching, and a SiGe / Si / SiGe / ...U-type thin film stack structure is epitaxially grown in the initial groove, and a concave layer is formed in the U-shaped thin film stack structure. groove. Fill the groove with silicon oxide, and then remove excess silicon and SiGe by polishing or etching. The silicon is further etched back to form SiGe fin structures.
[0032] Of course, the epitaxial materials are preferably SiGe and Si, but the present invention is not limited to these two materials, SiGe and Si.
[0033] specifically, Figure 1 to Figure 6 Each step of the fab...
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