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Liquid wax for dice bonding in GaAs MMIC thinning technology

A liquid wax and process technology, applied in the direction of wax adhesives, etc., can solve the problems of increasing process steps and raw materials, etc., and achieve the effect of solving the problem of debris, smooth hanging coating and strong adhesion

Inactive Publication Date: 2015-11-04
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method not only needs to increase the raw materials, but also needs to increase the process steps accordingly

Method used

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  • Liquid wax for dice bonding in GaAs MMIC thinning technology
  • Liquid wax for dice bonding in GaAs MMIC thinning technology
  • Liquid wax for dice bonding in GaAs MMIC thinning technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Preparation of liquid wax: Weigh Crystalbond 509 strong adhesive and acetone according to the ratio of 20g: 50ml, place them in a vessel, seal the vessel, and put it in a water bath at 60°C until Crystalbond 509 strong adhesive is completely dissolved to obtain The liquid wax of the present invention.

[0024] Adopt the application of the liquid wax that makes by embodiment 1 in GaAs MMIC thinning process:

[0025] 1) Evenly coat electron beam photoresist on the front side of the GaAs substrate, such as figure 1 shown. The electron beam photoresist is PMMA-A11 photoresist, the speed of the coating table is 1500 rpm, the time is 1min, the number of times of coating is 3 times, the thickness of the coating is about 5um, and the baking condition is 180 ℃ hot Plates were heated for 3 min.

[0026] 2) On the electron beam photoresist, evenly coat the liquid wax prepared by embodiment 1, such as figure 2 As shown; Among them, the speed of the glue leveling table is 1500...

Embodiment 2

[0034] Take by weighing Crystalbond 509 strong adhesive and acetone according to the proportioning ratio of 10g: 40ml, they are placed in vessel, airtight vessel, until Crystalbond 509 strong adhesive is all dissolved under 50 ℃ of water bath conditions, obtain the present invention liquid wax.

Embodiment 3

[0036] Take by weighing Crystalbond 509 strong adhesive and acetone by the proportioning ratio of 30g: 60ml, they are placed in vessel, airtight vessel, until Crystalbond 509 strong adhesive is all dissolved under 50 ℃ of water bath conditions, obtain the present invention liquid wax.

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Abstract

The invention discloses liquid wax for dice bonding in a GaAs MMIC thinning technology. The liquid wax is composed of a certain amount of a Crystal bond 509 energetic binder and acetone capable of dissolving the amount of the Crystal bond 509 energetic binder. The liquid wax obtained by dissolving the Crystal bond 509 energetic binder in acetone replaces high temperature wax used in a traditional dice bonding technology. Thus, mutual dissolution will not happen to a part where the liquid wax and a photoresist are contacted, and hardly-removed organic matters generated by mutual dissolution of a photoresist and high temperature wax are avoided. In addition, as the liquid wax and a photoresist are both easy to dissolve in acetone, the liquid wax and the photoresist are separated from each other only by being immersed in acetone. Therefore, the problem that removing of a photoresist is slow and hard during dice bonding by the use of high wax in a traditional technology is solved. Besides, the liquid wax provided by the invention has strong adhesiveness, and the problem of fragments during subsequent polishing and thinning processes is effectively solved.

Description

technical field [0001] The invention relates to a liquid wax, in particular to a liquid wax used for sticking chips in a GaAs MMIC thinning process. Background technique [0002] In the reliability experiments of GaAs (gallium arsenide) integrated circuits, most of the samples showed that the thermal resistance of the device decreased with time for a period of time, which was due to the contact between the chip and the shell due to the high test temperature. Stress has improved. For power field effect transistors (FETs), thermal resistance is an important parameter. When the device is in the same power consumption and external environment, the thermal resistance is small, which can reduce the channel temperature and improve the reliability of the device in normal use. The thermal resistance of GaAs devices can be reduced by reducing the thickness of GaAs wafers, etching through holes through GaAs wafers, and electroplating large-area metal films for heat dissipation on the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J191/06
Inventor 李海鸥曹明民林子曾周佳辉丁志华常虎东张旭芳李琦肖功利高喜
Owner GUILIN UNIV OF ELECTRONIC TECH
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