2results about How to "No additional process steps required" patented technology

The application relates to the technical field of image sensors, and provides an image sensor and a manufacturing method.The image sensor comprises a semiconductor substrate, a plurality of pixel regions, a metal interconnection layer and a blocking structure.The blocking structure is composed of an isolation structure arranged in the semiconductor substrate, a crosstalk modulation structure and a first contact hole structure which are sequentially arranged in a dielectric layer and correspond to the isolation structure.The blocking structure can form an effective light blocking wall structure on one hand, preventing light of one pixel region from being reflected by the metal interconnection layer and crosstalking into an adjacent pixel region; and on the other hand, the blocking structure can prevent over-etching of the isolation structure during processing of the first contact hole structure, thereby reducing the enrichment and diffusion of charges in the isolation structure, effectively improving the dark current performance of the device, and simultaneously reducing optical crosstalk and electrical crosstalk of the image sensor, which is conducive to improving the imaging quality of the image sensor.

The invention provides a shield gate trench MOSFET device and a preparation method thereof, a first contact hole and a second contact hole which are strip-shaped, continuous, alternately arranged and different in transverse width are formed in an interlayer dielectric layer, the transverse width of the second contact hole is larger than that of the first contact hole, and the first contact hole and the second contact hole are communicated with each other. The ion concentration of the channel region of the cell where the second contact hole is located is relatively high, so that the threshold voltage is relatively high; the channel ion concentration of the cell where the first contact hole is located is low, so that the threshold voltage is low, when the MOS device works, the channel of the cell with the low threshold voltage is firstly started for conduction, the channel of the cell with the high threshold voltage is then started for conduction, the cell which is started later can serve as a heat dissipation channel through the time-sharing starting mechanism, heat is dissipated for the cell which is started firstly, and the heat dissipation efficiency is improved. Therefore, the SOA and the heat dissipation capability of the device are remarkably improved, only the shape of the contact hole mask layout needs to be adjusted, additional process steps do not need to be added, the reliability of the MOS device is improved, and the application range of the MOS device is widened with extremely low cost.