A Lateral Insulated Gate Bipolar Transistor with Low Turn-on Overshoot Current

Abstract

A lateral insulated gate bipolar transistor with low turn-on overshoot current reduces the current peak value flowing through the device when the second gate pulse is turned on without reducing the current capability and withstand voltage capability. The semiconductor has: a buried oxygen on a P-type substrate, an N-type drift region on the buried oxygen, a P-type body region and an N-type buffer zone on it, and a P-type collector in the N-type buffer zone region, a field oxygen layer is provided above the N-type drift region, a P-type well region is provided in the P-type body region, a P-type emitter region and an emitter region are arranged in the P-type well region, and the inside of the above-mentioned 4 regions The boundary is synchronously invaginated to form a pinch-off region. The surface of the P-type body region is provided with a gate oxide layer, and the gate oxide layer is provided with a polysilicon gate electrode, and the polysilicon gate electrode is composed of the first gate electrode located above the surface of the P-type body region and the pinch-off region and the N-type drift region. Composed of the second grid electrode, the first grid electrode is connected to the first grid resistor, and the second grid electrode is connected to the second grid resistor.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, is a lateral insulated gate bipolar transistor with low turn-on overshoot current, and is especially suitable for single-chip integrated intelligent power chips. Background technique [0002] Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor, referred to as SOI-LIGBT), has the advantages of easy integration, high withstand voltage, and fast switching speed, and is widely used in monolithic integrated smart power chips middle. The current capability of SOI-LIGBT devices is a key factor affecting the power consumption and area of ​​monolithic integrated smart power chips. In order to improve the current capability of the device, a U-shaped channel can be used to increase the effective channel width, thereby improving the current capability of the device. However, the U-shaped channel inevitably...

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Problems solved by technology

However, the U-shaped channel inevitably increases the area of ​​the gate, resulting in an increase in gate capacitance

In the double-pulse test, the SOI-LIGBT device with U-shaped channel has obvious gate voltage overshoot, causing the current peak value flowing through the device to be too high when the second pulse is turned on.

Excessive current peaks will increase the turn-on loss of the device, and even cause latch-up and damage the device

In order to reduce the turn-on current peak, the method of increasing the gate resistance can be used; however, this method will cause the device switching speed to slow down and increase the turn-on loss

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