Transverse insulated gate bipolar transistor with low turn-on overshoot current

Abstract

The invention relates to a transverse insulated gate bipolar transistor with low turn-on overshoot current, which reduces the peak current flowing through the device when the second gate pulse is turned on under the premise of maintaining the current capacity and voltage withstanding capacity. According to the semiconductor, a buried oxide is arranged on a P-type substrate, an N-type drift regionis arranged on the buried oxide, a P-type body region and an N-type buffer region are arranged on the N-type drift region, the N-type buffer region is internally provided with a P-type collector region, a field oxide layer is arranged on the N-type drift region, the P-type body region is internally provided with a P-type well region, the P-type well region is internally provided with a P-type emitter region and an emitter region, and the inner side boundaries of the above four regions are synchronously recessed inwardly to form a pinch-off region. The surface of the P-type body region is provided with a gate oxide layer, a polycrystalline silicon gate electrode is arranged on the gate oxide layer, the polycrystalline silicon gate electrode is composed of a first gate electrode located on the surface of the P-type body region and a second gate electrode located on the pinch-off region and the N-type drift region, the first gate electrode is connected with a first gate resistor, and thesecond gate electrode is connected with a second gate resistor.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, is a lateral insulated gate bipolar transistor with low turn-on overshoot current, and is especially suitable for single-chip integrated intelligent power chips. Background technique [0002] Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor, referred to as SOI-LIGBT), has the advantages of easy integration, high withstand voltage, and fast switching speed, and is widely used in monolithic integrated smart power chips middle. The current capability of SOI-LIGBT devices is a key factor affecting the power consumption and area of ​​monolithic integrated smart power chips. In order to improve the current capability of the device, a U-shaped channel can be used to increase the effective channel width, thereby improving the current capability of the device. However, the U-shaped channel inevitably...

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Problems solved by technology

However, the U-shaped channel inevitably increases the area of ​​the gate, resulting in an increase in gate capacitance

In the double-pulse test, the SOI-LIGBT device with U-shaped channel has obvious gate voltage overshoot, causing the current peak value flowing through the device to be too high when the second pulse is turned on.

Excessive current peaks will increase the turn-on loss of the device, and even cause latch-up and damage the device

In order to reduce the turn-on current peak, the method of increasing the gate resistance can be used; however, this method will cause the device switching speed to slow down and increase the turn-on loss

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