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A write protection circuit of non-volatile memory which can prevent rewriting

A memory, non-volatile technology, applied in the field of write protection circuit that can prevent tampering, non-volatile memory write protection circuit, can solve the problems of data destruction, damage to storage bit content, etc., and achieve the effect of preventing rewriting damage

Active Publication Date: 2018-10-16
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, if the opposite data is maliciously or unintentionally written to the programmed memory bit again, the content of the memory bit will be destroyed
For example, if the storage bit 204 has been programmed to 1, that is, the left storage unit is programmed to be in a conductive state, and the right storage unit is kept in a non-conductive state. The cell is programmed to be in the conduction state, and the left memory cell is also in the conduction state, and the data of this storage bit 204 will be destroyed and become an invalid bit

Method used

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  • A write protection circuit of non-volatile memory which can prevent rewriting
  • A write protection circuit of non-volatile memory which can prevent rewriting
  • A write protection circuit of non-volatile memory which can prevent rewriting

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Embodiment Construction

[0053] The specific implementation of the present invention will be further described in detail below in conjunction with the examples.

[0054] Figure 5 It is an embodiment of the structure proposed in the present invention. Take the memory based on the resistive memory cell 5 as an example, in which the storage bit 501 includes a left storage unit 521, a right storage unit 522, a left storage unit 521 and a right storage unit 522 is a 1T1R structure in which a resistive memory unit (Resistive Memory) and an NMOS transistor (Transistor) are connected in series. The gates of the transistors in the left storage unit 521 and the right storage unit 522 are controlled by the same row selection signal. When the row selection signal is valid, the gates of the transistors in the left storage unit 521 and the right storage unit 522 are simultaneously selected.

[0055] The resistive memory cell Ra in the left memory cell 521 and the resistive memory cell Rb in the memory cell 522 are all...

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Abstract

The invention belongs to the technical field of the semiconductor memory, and particularly relates to a nonvolatile memory write protection circuit capable of avoiding rewriting. The write protection circuit structure comprises a storage bit, a data control logic module, two column selection transistors, two write access control transistors, two preread control transistors, a current source, a comparator, a latch, a write driving circuit and a write control signal generation circuit, wherein the storage bit is constructed by two units; the data control logic module is used for deciding to open a write access of a left unit or a right unit of the two units according to data to be written; the two column selection transistors are controlled by the same column selection signal; the grid electrodes of the two write access control transistors are independently controlled by a write control signal; the grid electrodes of the preread control transistors are independently controlled by a read control signal; and the write control signal generation circuit inputs a write enable signal and outputs a preread control signal and a write control signal. The invention also puts forwards a write operation flow which aims at a one-time programming memory which constructs the storage bit on the basis of double storage cells, can avoid malicious or unintentional rewriting damage and provides a high-safety storage scheme for sensitive data.

Description

Technical field [0001] The present invention belongs to the technical field of semiconductor memory, and specifically relates to a non-volatile memory write protection circuit, and more particularly to a write protection circuit capable of preventing tampering for one-time programming of non-volatile memory. Background technique [0002] In the information age, while information technology provides convenience to people, it also brings a serious problem, that is, information security, especially the security of sensitive data. The safe storage of sensitive data is the key to ensuring security. [0003] The semiconductor memory uses a data combination of 0 or 1 to store information, and each memory device unit constituting the mass memory can store one data (0 or 1). Generally, it is judged whether the data of the memory continues to be stored in the memory after a power failure. The memory can be divided into a volatile memory and a non-volatile memory, and the data of the non-vola...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/06
Inventor 解玉凤张晨林殷茵
Owner FUDAN UNIV