A write protection circuit of non-volatile memory which can prevent rewriting
A memory, non-volatile technology, applied in the field of write protection circuit that can prevent tampering, non-volatile memory write protection circuit, can solve the problems of data destruction, damage to storage bit content, etc., and achieve the effect of preventing rewriting damage
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[0053] The specific implementation of the present invention will be further described in detail below in conjunction with the examples.
[0054] Figure 5 It is an embodiment of the structure proposed in the present invention. Take the memory based on the resistive memory cell 5 as an example, in which the storage bit 501 includes a left storage unit 521, a right storage unit 522, a left storage unit 521 and a right storage unit 522 is a 1T1R structure in which a resistive memory unit (Resistive Memory) and an NMOS transistor (Transistor) are connected in series. The gates of the transistors in the left storage unit 521 and the right storage unit 522 are controlled by the same row selection signal. When the row selection signal is valid, the gates of the transistors in the left storage unit 521 and the right storage unit 522 are simultaneously selected.
[0055] The resistive memory cell Ra in the left memory cell 521 and the resistive memory cell Rb in the memory cell 522 are all...
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