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soft pulse modulation

A pulse signal, host controller technology, applied in the direction of discharge tube, plasma, electrical components, etc., can solve problems such as difficulty in controlling etching or deposition

Active Publication Date: 2018-03-30
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to control etch or deposit

Method used

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Experimental program
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Embodiment Construction

[0038] The following embodiments describe systems and methods for performing soft pulsing.

[0039] Figure 1A The graphs a1 , a2 , a3 , a4 are shown diagrammatically for a first variable (such as variable 1 etc.) or an embodiment of soft pulse modulation of a first parameter (such as parameter 1 etc.). Each of the graphs a1 to a4 plots a root mean square (RMS) value, which is an example of a first variable, versus time t. Examples of first variables include radio frequency (RF) generator power, inverse power, RF generator voltage, RF generator current, inverse voltage, inverse current, RF generator frequency, and inverse frequency . Examples of the first parameter include a gap between the upper electrode of the plasma chamber and the chuck, a pressure within the plasma chamber, and a flow rate of one or more process gases into the plasma chamber. The upper electrode, chuck, plasma chamber, and one or more process gases are further described below.

[0040] In some embodim...

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Abstract

The present invention relates to soft pulse modulation, and specifically describes systems and methods for soft pulse modulation. One of the systems includes a primary radio frequency (RF) generator for generating a first portion of a primary RF signal during a first state and a second portion of the primary RF signal during a second state. The main RF signal is a sinusoidal signal. The system also includes: an impedance matching circuit coupled to the main RF generator via the RF cable to modify the main RF signal to generate a modified RF signal; and a plasma chamber coupled to the impedance matching circuit via the RF transmission line. A plasma chamber is used to generate plasma based on the modified RF signal. The first part of the statistical measure has a positive or negative slope.

Description

technical field [0001] A system for etching material from or depositing material onto a wafer includes a generator and a plasma chamber for generating a radio frequency (RF) signal. The wafer is located in the plasma chamber. The generator supplies RF signals to the plasma chamber to etch the wafer or deposit material onto the wafer. Background technique [0002] Control over etching or deposition increases wafer throughput, saves costs, and reduces the time to etch material on a wafer or to deposit material onto a wafer. However, controlling etching or deposition is difficult. [0003] It is against such a background that the embodiments described in this disclosure have been proposed. Contents of the invention [0004] The present disclosure relates to systems and methods for soft pulse modulation. [0005] In various embodiments, one of the methods includes reducing the rate of change of the impedance of the plasma with respect to time, eg, by reducing dZ / dt, where ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H05H1/46
Inventor 约翰·C·小瓦尔考
Owner LAM RES CORP