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A quality detection method and system for a polysilicon thin film

A quality inspection method and technology of polysilicon thin film, applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as inaccurate quality inspection, achieve the effect of reducing costs, improving accuracy and efficiency

Active Publication Date: 2018-11-02
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method and system for quality detection of polysilicon thin films, to solve the technical problem of inaccurate quality detection existing in the quality detection methods of polysilicon thin films

Method used

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  • A quality detection method and system for a polysilicon thin film
  • A quality detection method and system for a polysilicon thin film
  • A quality detection method and system for a polysilicon thin film

Examples

Experimental program
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Embodiment 1

[0042] This embodiment provides a method for detecting the quality of a polysilicon film, such as image 3 shown, including the following steps:

[0043] Step S301 : irradiating light on the substrate with a polysilicon film formed on the surface, and photographing the polysilicon film to obtain a film image; go to step S302 .

[0044] In this embodiment, the polysilicon thin film may be a thin film after excimer laser annealing.

[0045] In this embodiment, the light source can irradiate light to the substrate, and a photographing device, such as a camera, can be used to photograph the polysilicon. In this embodiment, a device integrated with a light source and a shooting device may also be used to perform step S301.

[0046] The photographing of the polysilicon film in step S301 may specifically be: photographing the polysilicon film in a direction forming an angle of 5 degrees to 45 degrees with the substrate. For example, when photographing with a photographing device, ...

Embodiment 2

[0082] Such as Figure 5 As shown, this embodiment provides a polysilicon film quality detection system, including: a camera 501 and a processor 502; the camera 501 includes: a charge-coupled component 5011, an optical lens 5012, and a light source 5013;

[0083] The light source 5013 is located above the substrate with a polysilicon thin film formed on the surface, and is used to irradiate light to the substrate;

[0084] The optical lens 5012 is located above the substrate, and is used to collect light in the field of view and introduce the light into the charge-coupled device 5011, and the polysilicon thin film is included in the field of view;

[0085] The charge-coupled component 5011 is configured to sense the light to generate a corresponding image, and transmit the image to the processor 502;

[0086] The processor 502 is configured to:

[0087] dividing the film image into multiple image units according to the set size;

[0088] Acquiring display parameters of the ...

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Abstract

The present invention provides a method of detecting quality of a polysilicon thin film and a system utilizing the same. The method of detecting the quality comprises: illuminating light on a polysilicon thin-film panel, and taking a picture of a polysilicon thin film to obtain a thin film picture; dividing the thin film picture into a plurality of picture units; obtaining, according to a comparison result of comparing a display parameter of the polysilicon thin film shown on the picture units and a predefined parameter, a number of qualified picture units; and determining, according to the number of the qualified picture units and a total number of the picture units, quality of the polysilicon thin film.

Description

【Technical field】 [0001] The invention relates to the technical field of liquid crystal displays, in particular to a method and system for detecting the quality of polysilicon thin films. 【Background technique】 [0002] Currently, excimer laser annealing equipment is used to manufacture low-temperature polysilicon thin films, and the quality inspection of polysilicon thin films after excimer laser annealing is to use a macro (Macro) inspection to observe with human eyes and a strong light for polysilicon thin film Mura inspection. Using excimer laser to make polysilicon film will often cause bad polysilicon film, such as figure 1 The above is a photo obtained by using the current Macro detection method to detect the polysilicon film. It can be seen from the photo that there are bad lines in the polysilicon film, specifically bad horizontal or vertical lines. Therefore, it can be judged that the polysilicon film is Defective products; if appear as figure 2 As shown in the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/17C30B29/06
CPCG01N21/17
Inventor 叶昱均唐丽娟李勇王志刚李子健
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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