Unlock instant, AI-driven research and patent intelligence for your innovation.

Flash memory manufacturing method

A manufacturing method and technology of flash memory, which is applied in the field of flash memory manufacturing, can solve problems such as easy residual polysilicon, and achieve the effect of improving performance and reliability

Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The invention provides a flash memory manufacturing method to solve the problem that polysilicon is easy to remain at the corner of the side wall

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory manufacturing method
  • Flash memory manufacturing method
  • Flash memory manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] According to the background art, the existing flash memory manufacturing process is prone to form polysilicon residues at the corners of the sidewalls, seriously affecting the performance and reliability of the device. The inventors of the present application have found through long-term research that the reason for the polysilicon residue is that the corners of the sidewalls are difficult to be etched, that is, the existence of the sidewalls affects the etching of the second polysilicon layer. For this reason, the present invention provides a flash memory manufacturing method. After the stacked gate structure is formed, no sidewall structure is formed, but the second polysilicon layer is first subjected to photolithography and etching processes. Since the sidewall structure has not yet been formed at this time, It is easier to control the effect of the etching process, and the second polysilicon layers can be removed well to avoid defects.

[0029] Please refer to fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a flash memory manufacturing method. The method comprises the steps that a semiconductor substrate is provided; the semiconductor substrate comprises a first region and a second region; a first polysilicon layer and a tunneling oxide layer are sequentially formed on the first region, and a second polysilicon layer is formed on the first region and the second region; lithography and etching are carried out on the first polysilicon layer and the second polysilicon layer on the first region to form a stacked gate structure; lithography and etching are carried out on the second polysilicon layer to remove partial region of a memory unit region and the second polysilicon layer of the stacked gate structure on a peripheral circuit region, so that a first gate structure is formed and a second gate structure is formed on the second region; side walls are formed on both sides of the stacked gate structure, the first gate structure and the second gate structure; and the side walls on the second region are removed. According to the invention, the side walls are formed after lithography and etching are carried out on the second polysilicon layer; residual polysilicon is prevented; and the performance and the reliability of a device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a flash memory manufacturing method. Background technique [0002] Memory is used to store a large amount of digital information. Over the years, technological progress and market demand have resulted in more and more high-density various types of memory. Among them, flash memory (Flash memory) has long life, high integration, and fast access speed. , Ease of erasing and rewriting, etc. are widely used in various electronic products such as smart cards, SIM cards, microprocessors, and mobile phones. [0003] Generally, a typical flash memory device includes a storage area and a peripheral circuit area (periphery), wherein the storage area includes memory cells (cells), and the peripheral circuit area includes various types of transistors. In order to improve integration and process efficiency, embedded flash memory technology embeds flash memory technology in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H10B69/00
Inventor 万宇陈应杰
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com