Manufacturing method and display device of a thin film transistor

Abstract

The present application discloses a manufacturing method of a thin film transistor and a display device. The manufacturing method of the thin film transistor includes the steps of sequentially forming a gate metal layer, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate; Form a photoresist layer above the metal layer; use a semi-permeable film to form a preset pattern on the photoresist layer, so that the corresponding channel region of the photoresist layer forms a thin photoresist layer with a thickness smaller than other parts of the photoresist layer The first wet etching obtains the metal layer corresponding to the photoresist layer of the preset pattern; the first dry etching obtains the active layer and the ohmic contact layer corresponding to the photoresist layer of the preset pattern, And the photoresist thin layer is completely etched; the second wet etching removes the metal layer and metal oxide in the channel region, forming a source metal layer and a drain metal layer on both sides of the channel region; the second dry etching makes The ohmic contact layer is hollowed out corresponding to the channel region, and at the same time, the thickness of the active layer corresponding to the channel region is smaller than the thickness of other parts of the active layer. Improved product performance.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a method for manufacturing a thin film transistor and a display device. Background technique [0002] Thin-film transistor liquid crystal display is a technology ingeniously combining microelectronics technology and liquid crystal display technology, in which thin-film transistors are used as switches of pixels to control the rotation of liquid crystals to present different colors. The production of thin film transistors is the deposition of various layers of thin films, mainly including gate metal, gate insulating layer, active layer, ohmic contact layer, source and drain metal, passivation layer and pixel electrode, wherein the ohmic contact layer makes the active layer and metal electrode Form a good ohmic contact between them, reduce the contact resistance between the active layer and the metal layer, and increase the electron transmission rate. In addition, the oh...

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Problems solved by technology

[0003] When dry etching the photoresist layer, using dry etching gas containing oxidizing gas may cause metal oxide to appear on the upper surface of the second metal layer, resulting in poor subsequent etching and affecting display performance.

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