Insulated gate bipolar transistor (IGBT) model parameter calibration system and method based on neural network

Abstract

The invention discloses an Insulated gate bipolar transistor (IGBT) model parameter calibration system and method based on a neural network. The system is provided with a data input module, a circuit actual measurement module, a parameter simulation module and a parameter calibration module, wherein the data input module is used for setting the driving voltage V<gs> of a base and the input current I<T> of a collector; the circuit actual measurement module is used for measuring an actual voltage output value V<CE> between the collector and an emitter of an IGBT; the parameter simulation module is used for determining a voltage simulation output value V'<CE> between the collector and the emitter of the IGBT according to the V<gs>, the I<T> and an IGBT model parameter; and the parameter calibration module is used for calibrating the IGBT model parameter by using a neural network model according to the deviation between the V<CE> and the V'<CE>. The system has the advantages that the model parameter of an IGBT device can be calibrated, the IGBT device is modeled by comprehensively considering two states of switch-on and switch-off, the parameter optimization effect of the neural network model is fully utilized, and the change conditions of the interior of the IGBT are accurately described.

Description

technical field [0001] The invention relates to a parameter calibration technology of a semiconductor device, in particular to a neural network-based IGBT model parameter calibration system and method. Background technique [0002] The insulated gate bipolar transistor (InsulatedGateBipolarTransistor, IGBT) has both the high input impedance of the metal oxide semiconductor field effect transistor (Metal-Oxide-SemiconductorField-EffectTransistor, MOSFET) and the low conduction voltage of the power transistor (GiantTransistor, GTR). The advantages of drop, has been widely used in various electronic applications. Currently available device information mainly comes from public device data sheets and software simulation models. For example, the ideal model of IGBT can be obtained in Simulink, and the specific model and parameters of a certain type of IGBT can be obtained in Pspice. In practical applications, in order to better analyze the dynamic characteristics of the device an...

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Problems solved by technology

At the same time, Hefner only provided a set of reference model parameters, and did not give the method of parameter extraction; existing scholars obtain parameters through manuals and empirical formulas, with many estimated values, and the data acquisition is not systematic; some people obtain them through empirical formulas The initial value of the parameters, and then use a set of experimental data to optimize the parameters, the method is simple and easy to implement, but the optimization algorithm is not mentioned, the optimization accuracy is not high, and the direct relationship between the optimization objective function and the model parameters cannot be obtained from the model formula

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