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A multi-resistance memristor and its preparation method controlled by electric field and magnetic field

A multi-resistance, memristor technology with applications in field-controlled resistors, manufacturing/processing of electromagnetic devices, electrical components, etc.

Active Publication Date: 2017-10-31
山西师范大学
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there are relatively few studies on the co-regulation of electric and magnetic fields

Method used

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  • A multi-resistance memristor and its preparation method controlled by electric field and magnetic field
  • A multi-resistance memristor and its preparation method controlled by electric field and magnetic field
  • A multi-resistance memristor and its preparation method controlled by electric field and magnetic field

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Experimental program
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Effect test

Embodiment 1

[0023] Such as figure 1 As stated above, an embodiment of the present invention provides a multi-resistance memristive device that is jointly regulated by an electric field and a magnetic field. The device is composed of a substrate, a resistive functional layer deposited on the substrate, and a top electrode. / SiO 2 / Si substrate, wherein the Pt layer on the substrate is used as the bottom electrode, the structure of the resistive switching functional layer is ZnO / ZnO-Co, and the top electrode is Au.

[0024] The preparation method of the multi-resistance state memristor controlled by the electric field and the magnetic field is as follows:

[0025] Step 1: Install a ZnO ceramic target with a purity of 99.99% and a Co metal target and an Au metal target with a purity of 99.99% as target materials in a magnetron sputtering chamber, with a size of 1×1cm 2 Pt / Ti / SiO 2 / Si substrate into the magnetron sputtering chamber, the background vacuum is lower than or equal to 8×10 -5...

Embodiment 2

[0033] Such as Figure 5 As mentioned above, the embodiment of the present invention provides a multi-resistance memristor device that is jointly regulated by an electric field and a magnetic field. / SiO 2 / Si commercial substrate, in which the Pt layer on the substrate is used as the bottom electrode, the resistive switch function layer structure is ZnO / ZnO-Co, and the top electrode is Pt.

[0034] The bottom electrode is grounded, and when a certain positive voltage is applied to the top electrode, the device changes from a high-resistance state to a low-resistance state, and then when a certain negative voltage is applied to the top electrode, the device changes from a low-resistance state to a high-resistance state state.

[0035] The preparation method of the multi-resistance state memristor controlled by the electric field and the magnetic field is as follows:

[0036] Step 1: Install a ZnO ceramic target with a purity of 99.99% and a Co metal target and a Pt metal ta...

Embodiment 3

[0042] This embodiment provides a method for preparing a multi-resistance memristor that is jointly regulated by an electric field and a magnetic field, and the steps are as follows:

[0043] Step 1: Install a ZnO ceramic target with a purity of 99.99% and a Co metal target and a Pt metal target with a purity of 99.99% as target materials in a magnetron sputtering chamber, with a size of 1 × 1 cm 2 Pt / Ti / SiO 2 / Si substrate into the magnetron sputtering chamber, the background vacuum is lower than or equal to 8×10 -5 Pa.

[0044] The second step: high-purity Ar gas is used as the sputtering gas, and the Ar gas enters the sputtering chamber through the gas flow meter.

[0045] Step 3: Introduce Ar gas to keep the working pressure at 5-6 Pa, start the Co target and the ZnO target at the same time, and adjust the sputtering power of the Co target and the ZnO target to 20W and 50W respectively, and the sputtering pressure 0.8-2.0 Pa, the sputtering rate of Co is 0.048nm / s, and...

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Abstract

A multi-resistance memristor and its preparation method jointly regulated by an electric field and a magnetic field, comprising a substrate, a granular film resistance-switching functional layer and a top electrode deposited on the substrate, and the substrate is Pt / Ti / SiO2 / Si substrate, the particle film resistive function layer deposited on the substrate is ZnO / ZnO-Co, and the top electrode is Pt or Au. The beneficial effect of the present invention is that: the present invention designs and prepares the ZnO / ZnO-Co composite resistive function film, and simultaneously discovers the electric resistive effect in the Pt / ZnO / ZnO-Co / Pt device based on it and the magnetoresistance effect are two important properties. When a certain positive voltage is applied to the top electrode, the device changes from a high-resistance state to a low-resistance state, and then when a certain negative voltage is applied to the top electrode, the device changes from a low-resistance state to a high-resistance state. Regardless of whether the device is in a high-resistance state or a low-resistance state, it exhibits room temperature MR effects under an external magnetic field. Therefore, four resistance states can be realized through the joint regulation of the electric field and the magnetic field, and the device can be used for multi-state memory.

Description

technical field [0001] The invention relates to a multi-resistance memristor, in particular to a multi-resistance memristor and a preparation method thereof which are jointly regulated by an electric field and a magnetic field. Background technique [0002] In recent years, physics has made great progress in spin-related phenomena, and the research on spintronics has attracted much attention around the world. Among them, the discovery of the giant magnetoresistance (GMR) effect is considered to be the beginning of spintronics. In 1988, the Fert group in France and the Grünberg group in Germany discovered the GMR effect, which aroused people's enthusiasm for studying the magnetoresistance (MR) effect. The so-called MR effect refers to the change of the resistance of the material under the external magnetic field. So far, different types of MR effects, such as GMR effect, tunneling magnetoresistance, colossal magnetoresistance, and geometric magnetoresistance, have been obser...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L43/08H01L43/12H10N50/01H10N50/10
Inventor 李小丽贾娟李洁李燕春许小红
Owner 山西师范大学
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