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Method for reducing white pixels of cmos image sensor by polysilicon gettering

An image sensor and white pixel technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as difficulty and white pixel increase, and achieve the effect of reducing the number and metal impurity content

Active Publication Date: 2018-04-06
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

Although these measures have reduced the white pixels caused by metal pollution to a certain extent, it is extremely difficult to further reduce the white pixels, because a very small amount of metal ions can cause the increase of white pixels

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  • Method for reducing white pixels of cmos image sensor by polysilicon gettering
  • Method for reducing white pixels of cmos image sensor by polysilicon gettering

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Embodiment Construction

[0025] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0026] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.

[0027] In the following specific embodiments of the present invention, please refer to figure 2 , figure 2 It is a flowchart of the method for reducing white pixels of a CMOS image sensor by polysilicon gettering in the present invention; at the same time, please refer to Figure 3 ~ Figure 8 , Figure 3 ~ Figure 8 is a preferred embodiment of t...

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Abstract

The present invention discloses a method of reducing the white pixels of a CMOS image sensor by polysilicon gettering. In allusion to the problem that the white pixels of the conventional CMOS image sensor are more, by optimizing a conventional CIS technology integration method, and by utilizing an essential polysilicon layer for manufacturing a polysilicon transmission grid in the conventional technology, the metal impurities in a silicon epitaxial layer are absorbed during an annealing process, so that the metal impurity content in a photodiode can be reduced, and accordingly, the number of the white pixels of the CMOS image sensor can be reduced effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and more particularly, to a method for reducing white pixels of a CMOS image sensor by polysilicon gettering. Background technique [0002] With the rapid development of the mobile Internet, people's demand for smart terminals is increasing, and image sensors, known as the "eyes" of smart terminals, have also ushered in unprecedented development space. Due to its high power consumption, the traditional CCD image sensor is limited in the market of high-performance digital cameras; CMOS image sensor (CIS) not only has low power consumption and fast speed, but also is easy to be compatible with existing semiconductor processes, and its production cost is relatively low. Low, which makes CIS occupy half of the image sensor market. [0003] The future direction of CIS development is high pixel, low power consumption and high image quality. High pixels and low p...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L27/146
CPCH01L27/14643H01L27/14683H01L27/14698
Inventor 范晓陈昊瑜王奇伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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