A Fast Method for Determining Secondary Electron Yield in Regular Slots

Abstract

The invention discloses a method for quickly determining secondary electron yields of regular tanks. The method includes that influence of surface morphology on the secondary electron yields is divided into two aspects, yields are affected by angles of incident electron and surface action angles and regions where incident electrons can irradiate on one aspect, the influence on yields is reflected by means of establishing blocking relations between characteristics of morphology structures in the irradiation regions and emergent electrons on the other aspect, and the yields are ultimately compared to smooth surface yields, so that the secondary electron yields under the condition of the surface morphology can be quickly acquired. The method has the advantages that the method is high in computation speed, the secondary electron emission yields obtained by the aid of the method are matched with experimental results, accordingly, influence laws of the morphology characteristics on the secondary electron yields can be quantitatively revealed, and the effective method can be provided for artificially designing and regulating and controlling structure parameters under the conditions of specific secondary electron yields in the field of accelerators, dielectric windows of high-power microwave sources, high-power microwave components and the like.

Description

technical field [0001] The invention relates to a method for quickly determining the secondary electron yield of a regular slot, which belongs to the technical field of physical electronics. Background technique [0002] The secondary electron emission characteristics of materials have an important impact on the performance of vacuum electronic devices. On the one hand, the core principle of various electron multiplier tubes, scanning electron microscopes, Auger electron spectrometers and other various electronic surface analysis instruments is to use the secondary electron emission process of materials. On the other hand, the secondary electron multiplication discharge process is an important factor affecting the reliability and life of various high-power microwave vacuum devices, nuclear fusion and accelerators. Therefore, accurate secondary electron emission characteristics are of great significance to the design, evaluation and performance improvement of various vacuum ...

AI Technical Summary

Problems solved by technology

[0004] At present, the methods for determining the secondary electron yield of regular slots are divided into three categories: the first category is to make samples and test them through experiments; the second category is to simulate the interaction process between secondary electrons and materials through Monte Carlo methods. The first method is the closest to the actual movement process of electrons. This method requires multiple cycles, generally at least 100,000 times, to give a credible result, so the simulation time is relatively long; the third type does not involve electrons and material surfaces. The action process of the material, using the method of phenomenology and trajectory tracking to count the number of secondary electrons outside the shape, so as to calculate the output of secondary electrons, although this method does not involve the movement process of electrons in the material, but it also requires more The simulation results are obtained in two cycles, and the calculation is complicated

[0005] Existing methods use image-only and trajectory tracking methods to obtain secondary electron yields, or use Monte Carlo methods to obtain secondary electron yields. Obtaining secondary electron yields under surface topography is complicated and slow

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