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doping method
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A technology of doping layer and doping silicon, applied in the field of doping, can solve problems such as increasing the complexity of the process, and achieve the effects of high integration, strong coherence, and simple overall process
Active Publication Date: 2018-06-26
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome the defect that a process of forming a mask is unavoidable in the prior art where local doping needs to be formed, thereby increasing the complexity of the process, and to provide a highly coherent A revolutionary doping method, which uses the characteristics of the diffusion process itself to form a mask, avoids additional mask steps, simplifies the process flow, and has stronger coherence between steps
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Embodiment 1
[0055] refer to Figure 1-Figure 5 , taking an N-type substrate as an example to introduce the process flow of this embodiment. Referring to the accompanying drawings, the upper part represents the front side of the substrate, and the lower part represents the back side of the substrate, which is only for the convenience of description, and should not be construed as a limitation of the present invention.
[0056] Such as figure 1 As shown, the front and back surfaces of the N-type substrate 1 are textured first, thereby forming the textured surface on the front and the textured surface on the back, so as to improve the utilization rate of light.
[0057] refer to figure 2 A P-type doped layer 2 is formed on the back side by thermal diffusion, and a layer of BSG (borosilicate glass) 3 is formed on the back side of the N-type substrate 1 during the diffusion doping process.
[0058] refer to image 3 , using laser ablation (laser ablation) to remove the BSG3, P-type doped...
Embodiment 2
[0063] The basic principle of embodiment 2 is the same as embodiment 1, the difference is:
[0064] In this embodiment, only the front side of the N-type substrate 1 is textured, and the texturing step is performed after the PN structure on the back side is fabricated and before doping on the front side. When the front is textured, it is necessary to set a protective layer on the back to protect the PN structure on the back from being affected.
[0065] refer to Figure 6-Figure 10 First, a P-type doped layer 2 is formed on the back of the N-type substrate 1 through thermal diffusion, and a BSG3 is formed on the back of the N-type substrate 1 during the thermal diffusion.
[0066] refer to Figure 7 , open the window 4 for ion implantation on the back side.
[0067] refer to Figure 8 N-type ions are implanted into the back surface of the N-type substrate 1 by ion implantation to form the N-type doped region 5 . Similarly, the BSG is used as a mask for ion implantation to...
Embodiment 3
[0072] The basic principle of embodiment 3 is the same as embodiment 1, the difference is:
[0073] After the suede is formed on both the front and back sides, an N-type doped layer is first formed on the front side of the N-type substrate, and then the back is diffused to form a P-type doped layer, that is, the order of forming the N-type doped layer is different from that in Example 1. .
[0074] Refer to Example 1 for all the other unmentioned parts.
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Abstract
The invention discloses a doping method, which comprises the following steps of forming a second conductivity type doping layer on the back surface of a first conductivity type substrate through the diffusing and doping process, and forming an oxidation layer on the back surface of the second conductivity type doping layer during the diffusing and doping process; etching the oxidation layer within a predetermined area till exposing the first conductivity type substrate and forming a groove on the back surface of the first conductivity type substrate; implanting first conductivity type ions in the groove to form a first conductivity type doped region; and forming a first conductivity type doping layer on the front surface of the first conductivity type substrate. According to the invention, the oxidation layer formed through the thermal diffusion process is adopted as a mask for realizing the local doping effect through the subsequent ion implantation process. Therefore, no extra mask is required to form. The entire process is extremely simple and very strong in consistency.
Description
technical field [0001] The invention relates to a doping method, in particular to a doping method for back contact batteries. Background technique [0002] In the semiconductor doping process, it is often necessary to achieve local doping, such as the selective emitter structure of solar cells (need to form local heavy doping), the structure of back contact cells (PN junctions are all formed on the back of the cells), Alternatively, a locally doped structure also needs to be formed in a MOS (Metal Oxide Semiconductor) tube. Usually, in order to form local doping, a mask (mask) is needed to expose the doped positions and cover the undoped areas. Commonly used masks such as photoresist, for example, use photolithography to expose the positions to be doped for subsequent doping. [0003] That is to say, in the existing process that needs to achieve local doping, there will inevitably be a step of forming a mask, and the quality of the mask and the accuracy of the mask will al...
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Application Information
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