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semiconductor structure

A semiconductor and heavily doped region technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as component damage

Active Publication Date: 2018-10-02
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, during electrostatic discharge, the protected component may be destroyed before the protective component is opened

Method used

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Embodiment Construction

[0039] A semiconductor structure including an electrostatic discharge protection element and a method of manufacturing the same will now be described. Some elements in the drawings may be enlarged or omitted for clarity. Where possible, like elements are indicated with like element numbers.

[0040] Please refer to figure 1 , which shows a schematic diagram of a semiconductor structure according to an embodiment. taken from figure 1 The cross-section of the line A-A' can have as figure 2 the shape shown.

[0041] The semiconductor structure includes an ESD protection device 100 and a substrate 102 . The substrate 102 may be a silicon substrate or a silicon-on-insulator (SOI) substrate, etc., and optionally includes layers formed thereon. The substrate 102 can be fabricated by epitaxial or non-epitaxial methods. The substrate 102 may have a p-type doping type or an n-type doping type. Here, the substrate 102 has, for example, a p-type doping type.

[0042] exist fig...

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Abstract

The present invention discloses a semiconductor structure. The semiconductor structure comprises a substrate, a first trap formed in the substrate, a first heavily doped region formed in the first trap, a second heavily doped region formed in the substrate and separated from the first trap, a second trap formed below the second heavily doped region in the substrate, a gate dielectric substance formed on the substrate and disposed between the first heavily doped region and the second heavily doped region, and a gate electrode formed on the gate dielectric substance. And the gate dielectric substance has substantially uniform thickness at least at a part striding across one side extending from approaching the second heavily doped region. The first trap has a first doping type. The first heavily doped region, the second heavily doped region and the second well has a second doping type.

Description

technical field [0001] The present invention relates to a semiconductor structure, and more particularly, the invention relates to a semiconductor structure including an electrostatic discharge (ESD) protection element. Background technique [0002] Electrostatic discharge can lead to the destruction of sensitive electronic components. Therefore, ESD protection components are often provided in semiconductor structures. High-voltage electronic components, such as extended drain metal oxide semiconductor field effect transistor (ExtendedDrain MOSFET, EDMOSFET), lateral double-diffused metal oxide semiconductor field effect transistor (Lateral Double-diffused MOSFET, LDMOSFET) and application of reduced surface field , RESURF) technology components, etc., can be used as electrostatic discharge protection components. [0003] The ESD protection performance of high-voltage electronic components is generally related to the overall width of the component and the surface / lateral r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 陈永初
Owner MACRONIX INT CO LTD
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