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Etching solution composition and method of using same to manufacture array substrate for liquid crystal display

A technology of composition and etching solution, which is applied in the direction of instruments, electric solid devices, semiconductor devices, etc., can solve the problem of insufficient etching solution, and achieve the effects of excellent etching rate, excellent driving characteristics, and excellent work safety

Active Publication Date: 2018-11-20
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the above-mentioned etching solutions are not sufficient to satisfy the relevant requirements in terms of CD loss, slope (taper), pattern straightness, metal residue, storage stability, number of sheets to be processed, etc. for a copper-based metal layer. Conditions required in the field

Method used

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  • Etching solution composition and method of using same to manufacture array substrate for liquid crystal display
  • Etching solution composition and method of using same to manufacture array substrate for liquid crystal display
  • Etching solution composition and method of using same to manufacture array substrate for liquid crystal display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～6 and comparative example 1～6

[0086] Etching liquid compositions were prepared by mixing components at the contents described in Table 1 below.

[0087] [Table 1]

[0088] (Unit: wt%)

[0089]

[0090] [chemical formula 2]

[0091]

[0092] [chemical formula 3]

[0093]

[0094] [chemical formula 4]

[0095]

[0096] [chemical formula 5]

[0097]

[0098] [chemical formula 6]

[0099]

[0100] [chemical formula 7]

[0101]

[0102] [chemical formula 8]

[0103]

experiment example 1

[0104] Experimental Example 1: Evaluating the Etching Profile of an Etching Solution Composition for a Cu / Mo-Ti Double Layer

[0105] The etching of Cu / Mo—Ti double layer was performed using the etchant composition of Examples 1-6 and Comparative Examples 1-6. When performing etching, etching is performed for 100 seconds using an etching solution composition at a temperature of about 30° C. Etching rates as a function of time were obtained by visually measuring EPD (End Point Detection, metal etch timing). The profile of the etched Cu / Mo—Ti bilayer was examined using SEM (Hitachi, model S4700), and the results are shown in Table 2 below.

experiment example 2

[0106] Experimental example 2: Evaluation of the number of sheets processed

[0107] A reference test was performed using the etching solution compositions of Examples 1 to 6 and Comparative Examples 1 to 6, and 4000 ppm of copper powder was added to the etching solution for the reference test and completely dissolved. Afterwards, etching was performed again with the etchant used for the reference test, and the reduction ratio of the etching rate was evaluated.

[0108]

[0109] ○: Excellent (reduction ratio of etching rate is less than 10%)

[0110] Δ: Good (reduction ratio of etching rate is 10% to 20%)

[0111] ×: Poor (reduction rate of etching rate is greater than 20%)

[0112] [Table 2]

[0113]

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PUM

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Abstract

The present invention provides an etching solution composition wherein the mmol number of a repetitive unit of polyethylene glycol with respect to 1g of the etching solution composition is a numerical value of ethylene oxide, and the numerical value of ethylene oxide of the etching solution composition is 0.4 to 2. The etching solution composition comprises: a metal film oxidizing agent; a compound containing fluorine; a compound containing a nitrogen atom; phosphorous acid; polyethylene glycol; and remaining water.

Description

technical field [0001] The invention relates to an etching liquid composition for a metal layer and a method for manufacturing an array substrate for a liquid crystal display using the etching liquid composition. Background technique [0002] As flat panel display screens such as LCDs, PDPs, and OLEDs, especially TFT-LCDs, have become larger, there has been extensive reconsideration of single layers consisting of copper or copper alloys, or of copper or copper alloys / other metals, alloys of other metals, or Multilayers of greater than two layers of metal oxide to reduce wiring resistance and improve adhesion to the dielectric silicon layer. For example, a copper / molybdenum layer, a copper / titanium layer, or a copper / molybdenum-titanium layer may be formed as a gate line of a TFT-LCD and a source / drain wiring constituting a data line, and may contribute to enlargement of a display screen. Therefore, there is a need to develop compositions having excellent etching properties ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26H01L27/12H01L21/28
CPCC23F1/18C23F1/26C23F1/44G02F1/13439
Inventor 崔汉永金炫佑田玹守赵成培金相泰李俊雨
Owner DONGWOO FINE CHEM CO LTD