Semiconductor device including trench structure

Abstract

The present invention relates to semiconductor devices including trench structures. A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes an array of transistor cells in a semiconductor substrate. Components of the transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structure extends in a first linear direction parallel to the main surface of the semiconductor substrate. the trench structure comprises a plurality of cascaded trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of a trench structure, The first point and the second point are arranged along the first linear direction. The trench segment includes a portion extending in a direction different from the first direction.

Description

Background technique [0001] Power transistors are commonly used as switches in automotive and industrial electronics. Typically, such transistors require low on-state resistance (R on ), while ensuring high voltage blocking capability. For example, a MOS (Metal-Oxide-Semiconductor) power transistor should be able to block a drain-to-source voltage V of about tens to about hundreds or even thousands of volts depending on the application requirements ds . MOS power transistors typically conduct very large currents that can go up to about hundreds of amperes, typically at a gate-source voltage of about 2 to 20 V. [0002] In trench power devices, components of the transistor, such as the gate electrode, are typically arranged in a trench structure formed in the main surface of a semiconductor substrate. Such trench power devices typically implement vertical transistors in which current flow occurs primarily from a first side (eg, the top surface of the semiconductor substrate...

AI Technical Summary

Problems solved by technology

When increasing trench depth is used to achieve requirements such as voltage blocking requirements, wafer bowing can occur, which imposes severe constraints on the handling of these power devices

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