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Method for measuring patterned sapphire substrate

A patterned sapphire and substrate technology, applied in the field of optical measurement, can solve the problems of destroying the integrity of the patterned sapphire substrate to be measured, unable to be reused, affecting processing operations, etc.

Inactive Publication Date: 2016-03-02
CHENG MEI INSTR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In other words, the existing method of measuring a patterned sapphire substrate using a scanning electron microscope is a kind of destructive sampling method, which not only destroys the integrity of the patterned sapphire substrate to be tested, but also makes the specific area cut out for measurement It cannot be reused afterwards, and because of the sampling measurement, even if the patterned sapphire substrate selected for measurement is not found to be defective, the patterned sapphire substrate that is actually used as a product component may still have defects that have not been detected. The measured defects affect the subsequent processing operations
[0004] In view of this, how to provide an optical measurement device and an optical measurement method for measuring a patterned sapphire substrate, so as to avoid damage to the patterned sapphire substrate in the early measurement process and improve the reproducibility of measuring the surface of the patterned sapphire substrate , which is an urgent problem to be solved in this industry

Method used

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  • Method for measuring patterned sapphire substrate
  • Method for measuring patterned sapphire substrate
  • Method for measuring patterned sapphire substrate

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Embodiment Construction

[0017] In this case, an optical measuring device 100 for measuring a patterned sapphire substrate 200 is mainly used for patterning by changing the intensity of the conjugated focal beam, the focus position and other parameters of the non-contact conjugated focal beam. The measurement operation of a surface 210 of the sapphire substrate 200 is used to obtain the topography, ball diameter and bottom width of the surface 210 of the patterned sapphire substrate 200 for use in subsequent processing techniques.

[0018] Such as figure 1 As shown, the optical measurement device 100 of the present invention includes a light source 110 , an optical fiber connector 120 , an optical probe 130 , a plurality of optical fibers 140 , and an image processor 150 and other components.

[0019] Wherein, the light source 110 is used to emit a first light beam 300 . The fiber optic connector 120 is disposed adjacent to the light source 110 . The optical probe 130 is disposed adjacent to the fib...

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Abstract

An optical measuring method for measuring the surface of a patterned sapphire substrate is provided. The method has the following steps: using an automated optical inspection procedure to check the surface of the patterned sapphire substrate and define a non-defective area and a defective area; providing a light source to emit a first light beam; making the first light beam pass through an optical fiber connector and an optical probe, and focus on a measurement focal point defined on the surface of the patterned sapphire substrate. The measurement focal point is disposed on the non-defective area. The optical probe has a pinhole disposed opposite the measurement focal point. The first light beam is emitted into the pinhole. The pinhole and the measurement focal point are conjugated.

Description

technical field [0001] The present invention relates to an optical measurement method for measuring a patterned sapphire substrate, in particular to an optical measurement method for measuring a surface state of a patterned sapphire substrate using an optical conjugate focus technique. Background technique [0002] In the prior art, the measurement of the patterned sapphire substrate (Pattern Sapphire Substrate, PSS) is mainly carried out by using a scanning electron microscope (Scanning Electron Microscopy, SEM). Moreover, limited by the resolution of the scanning electron microscope, when using the scanning electron microscope for measurement, it is necessary to cut off the area of ​​the patterned sapphire substrate to be measured before subsequent measurement operations can be performed. [0003] In other words, the existing method of measuring a patterned sapphire substrate using a scanning electron microscope is a kind of destructive sampling method, which not only dest...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/956
CPCG01N21/956G01N21/87
Inventor 蔡政道
Owner CHENG MEI INSTR TECH